Cat-CVD SiN passivation films for OLEDs and packaging

被引：14

作者：

Heya, Akira ^{[1
]}

Minamikawa, Toshiharu ^{[2
]}

Niki, Toshikazu ^{[3
]}

Minami, Shigehira ^{[3
]}

Masuda, Atsushi ^{[4
]}

Umemoto, Hironobu ^{[4
]}

Matsuo, Naoto ^{[1
]}

Matsumura, Hideki ^{[4
]}

机构：

[1] Univ Hyogo, Himeji, Hyogo 6712280, Japan

[2] Ind Res Inst Ishikawa, Kanazawa, Ishikawa 9208203, Japan

[3] Ishikawa Seisakusho Ltd, Haku San, Ishikawa 9240051, Japan

[4] Japan Adv Inst Sci & Technol, Nomi, Ishikawa 9231292, Japan

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 05期

基金：

日本科学技术振兴机构;

关键词：

Cat-CVD; passivation; barrier film; roll to roll; silicon nitride; organic light-emitting diode; water vapor transmission rate; Ca corrosion test;

D O I：

10.1016/j.tsf.2007.06.220

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A Roll-to-roll type catalytic chemical vapor deposition (Cat-CVD) apparatus was developed for the application to flexible organic light-emitting diode (OLED) displays and packaging. Silicon nitride (SiNx) films were prepared by this roll-to-roll type apparatus at temperatures below 60 degrees C. It was found that these SiNx films are highly moisture resistant, and the water vapor transmission rate (WVTR) on plastic substrates could be lowered to 0.01 g/m(2) day. Roll-to-roll type Cat-CVD is one of the most promising methods for the preparation of barrier films for OILED displays and packaging. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：553 / 557

页数：5

共 50 条

[41] Cat-CVD SiN-passivated AlGaN-GaNHFETs with thin and high al composition barrier layers
Higashiwaki, M
Hirose, N
Matsui, T
IEEE ELECTRON DEVICE LETTERS, 2005, 26 (03) : 139 - 141
[42] Effect of H2 dilution on Cat-CVD a-SiC:H films
Swain, BP
Rao, TKG
Roy, M
Gupta, J
Dusane, RO
THIN SOLID FILMS, 2006, 501 (1-2) : 173 - 176
[43] FORMATION OF POLYSILICON FILMS BY CATALYTIC CHEMICAL VAPOR-DEPOSITION (CAT-CVD) METHOD
MATSUMURA, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (8B): : L1522 - L1524
[44] Low temperature deposition of crystalline AIN films by bias-enhanced Cat-CVD
Wang, GJ
Wang, B
Huang, AP
Xu, SL
Zhu, MK
Wang, BB
Yan, H
MATERIALS LETTERS, 2004, 58 (20) : 2486 - 2488
[45] Status of Cat-CVD (Hot Wire CVD) research in the United States
Mahan, AH
THIN SOLID FILMS, 2001, 395 (1-2) : 12 - 16
[46] Cat-CVD process and its application to preparation of Si-based thin films
Matsumura, H
Masuda, A
Izumi, A
AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999, 1999, 557 : 67 - 78
[47] Anomalous grain boundary and carrier transport in cat-CVD poly-Si films
Japan Advanced Inst of Science and, Technology, Ishikawa-ken, Japan
J Non Cryst Solids, Pt 2 (1016-1020):
[48] Anomalous grain boundary and carrier transport in cat-CVD poly-Si films
Heya, A
He, AQ
Otsuka, N
Matsumura, H
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 1016 - 1020
[49] Surface chemical reactions of diamond (100) by Cat-CVD
Song, XM
Wang, M
Wang, B
Chen, GH
Yan, H
THIN SOLID FILMS, 2001, 395 (1-2) : 257 - 259
[50] Summary of research in NEDO Cat-CVD project in Japan
Matsumura, H
THIN SOLID FILMS, 2001, 395 (1-2) : 1 - 11

← 1 2 3 4 5 →