Cat-CVD SiN passivation films for OLEDs and packaging

被引：14

作者：

Heya, Akira ^{[1
]}

Minamikawa, Toshiharu ^{[2
]}

Niki, Toshikazu ^{[3
]}

Minami, Shigehira ^{[3
]}

Masuda, Atsushi ^{[4
]}

Umemoto, Hironobu ^{[4
]}

Matsuo, Naoto ^{[1
]}

Matsumura, Hideki ^{[4
]}

机构：

[1] Univ Hyogo, Himeji, Hyogo 6712280, Japan

[2] Ind Res Inst Ishikawa, Kanazawa, Ishikawa 9208203, Japan

[3] Ishikawa Seisakusho Ltd, Haku San, Ishikawa 9240051, Japan

[4] Japan Adv Inst Sci & Technol, Nomi, Ishikawa 9231292, Japan

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 05期

基金：

日本科学技术振兴机构;

关键词：

Cat-CVD; passivation; barrier film; roll to roll; silicon nitride; organic light-emitting diode; water vapor transmission rate; Ca corrosion test;

D O I：

10.1016/j.tsf.2007.06.220

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A Roll-to-roll type catalytic chemical vapor deposition (Cat-CVD) apparatus was developed for the application to flexible organic light-emitting diode (OLED) displays and packaging. Silicon nitride (SiNx) films were prepared by this roll-to-roll type apparatus at temperatures below 60 degrees C. It was found that these SiNx films are highly moisture resistant, and the water vapor transmission rate (WVTR) on plastic substrates could be lowered to 0.01 g/m(2) day. Roll-to-roll type Cat-CVD is one of the most promising methods for the preparation of barrier films for OILED displays and packaging. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：553 / 557

页数：5

共 50 条

[31] Formation of ultra-thin SiNx films using Cat-CVD system
Izumi, A
Ichise, T
Matsumura, H
REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY, SUPPLEMENT NO.16, 1997, : 121 - 124
[32] Formation of polysilicon films by catalytic chemical vapor deposition (cat-CVD) method
Matsumura, Hideki
Japanese Journal of Applied Physics, Part 2: Letters, 1991, 30 (8 B):
[33] Characteristiscs of Nanocrystalline Silicon Films Deposited by Cat-CVD Below 100 °C
Song, Tae-Ho
Keum, Ki-Su
Kang, Sin-Young
Park, Jung-Hoon
Kim, Jin-Hoon
Hong, Wan-Shick
THIN FILM TRANSISTORS 11 (TFT 11), 2012, 50 (08): : 55 - 58
[34] Characteristiscs of Nanocrystalline Silicon Films Deposited by Cat-CVD Below 100 °C
Song, Tae-Ho
Hong, Wan-Shick
STUDENT POSTERS (GENERAL) - 223RD ECS MEETING, 2013, 53 (29): : 49 - 52
[35] Preparation of SiO2 thin films using the Cat-CVD method
Saito, K
Uchiyama, Y
Abe, K
THIN SOLID FILMS, 2003, 430 (1-2) : 287 - 291
[36] High fT and fmax AlGaN/GaN HFETs achieved by using thin and high-Al-composition AlGaN barrier layers and Cat-CVD SiN passivation
Higashiwaki, M.
Onojima, N.
Matsui, T.
Mimura, T.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (07): : 1851 - 1855
[37] ULVAC research and development of Cat-CVD applications
Asari, Shin
Fujinaga, Tetsushi
Takagi, Makiko
Hashimoto, Masanori
Saito, Kazuya
Harada, Masamichi
Ishikawa, Michio
THIN SOLID FILMS, 2008, 516 (05) : 541 - 544
[38] Status of Cat-CVD (Hot-Wire CVD) research in Europe
Schropp, REI
THIN SOLID FILMS, 2001, 395 (1-2) : 17 - 24
[39] Formation of gas barrier films by Cat-CVD method using organic silicon compounds
Oyaidu, Takuya
Ogawa, Yohei
Tsurumaki, Kazuhiko
Ohdaira, Keisuke
Matsumura, Hideki
THIN SOLID FILMS, 2008, 516 (05) : 604 - 606
[40] Nanosized β-SiC films prepared by a Cat-CVD with negative bias at low substrate temperature
Wang, B
Zhao, Q
Li, JC
Wang, BB
Song, XM
Yang, XD
Yan, H
Wang, M
APPLIED SURFACE SCIENCE, 2003, 217 (1-4) : 314 - 318

← 1 2 3 4 5 →