An Investigation of the IGBT Gate Driving Conditions employing an Equivalent Circuit Model of Power Semiconductor Device

被引：0

作者：

Uemura, Hirofumi ^{[1
]}

Yoshida, Daichi ^{[1
]}

Matsumoto, Hiroyuki ^{[1
]}

Fujimoto, Hisashi ^{[1
]}

Okuma, Yasuhiro ^{[1
]}

机构：

[1] Fuji Elect CO LTD, 1 Fuji Machi, Hino, Tokyo, Japan

来源：

2017 19TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'17 ECCE EUROPE) | 2017年

关键词：

Simulation; Device modeling; IGBT; Free Wheel Diode (FWD);

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper, an optimal gate driving condition between switching loss and surge voltage is investigated by circuit simulation technique. An equivalent circuit model of power semiconductor devices, such as an IGBT and a FWD, are employed. Chip level transient switching waveforms of IGBT at different gate driving condition are calculated and evaluated with measurement results. Evaluation result shows good agreement with measurements. Furthermore, module level switching performance is investigated based on the simulation model. The trade-off between switching losses and surge voltages respect to the gate resistance is analyzed and discussed.

引用

页数：6

共 50 条

[31] Further improvements in equivalent-circuit model with levelized incomplete LU factorization for mixed-level semiconductor device and circuit simulation
Dai, JF
Chang, CC
Li, SJ
Tsai, YT
SOLID-STATE ELECTRONICS, 2004, 48 (07) : 1181 - 1188
[32] Methodology of Gate Voltage Selection for Power Loss Manipulation of Power Semiconductor Device
Chanekar, Abhishek
Deshmukh, Nachiketa
Arya, Abhinav
Anand, Sandeep
2022 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2022,
[33] Status and trends of power semiconductor device models for circuit simulation
Kraus, R
Mattausch, HJ
IEEE TRANSACTIONS ON POWER ELECTRONICS, 1998, 13 (03) : 452 - 465
[34] Equivalent Circuit Model for a GaN Gate Injection Transistor Bidirectional Switch
Ide, Toshihide
Shimizu, Mitsuaki
Shen, Xu-Qiang
Morita, Tatsuo
Ueda, Tetsuzo
Tanaka, Tsuyoshi
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (10) : 2643 - 2649
[35] EQUIVALENT-CIRCUIT MODEL OF FET INCLUDING DISTRIBUTED GATE EFFECTS
KUVAS, RL
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1193 - 1195
[36] Generalized Equivalent Circuit Model of HEMT Including Distributed Gate Effects
Goralczyk, Marcin
2016 21ST INTERNATIONAL CONFERENCE ON MICROWAVE, RADAR AND WIRELESS COMMUNICATIONS (MIKON), 2016,
[37] Asymmetric Contacts on a Single SnO2 Nanowire Device: An Investigation Using an Equivalent Circuit Model
Huh, Junghwan
Na, Junhong
Ha, Jeong Sook
Kim, Sangtae
Kim, Gyu Tae
ACS APPLIED MATERIALS & INTERFACES, 2011, 3 (08) : 3097 - 3102
[38] The negative differential resistance characteristics of an RC-IGBT and its equivalent circuit model
张文亮
朱阳军
卢烁今
田晓丽
Journal of Semiconductors, 2014, (02) : 66 - 70
[39] HiSIM-IGBT: A Compact Si-IGBT Model for Power Electronic Circuit Design
Miyake, Masataka
Navarro, Dondee
Feldmann, Uwe
Mattausch, Hans Juergen
Kojima, Takashi
Ogawa, Takaoki
Ueta, Takashi
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (02) : 571 - 579
[40] The negative differential resistance characteristics of an RC-IGBT and its equivalent circuit model
张文亮
朱阳军
卢烁今
田晓丽
Journal of Semiconductors, 2014, 35 (02) : 66 - 70

← 1 2 3 4 5 →