An Investigation of the IGBT Gate Driving Conditions employing an Equivalent Circuit Model of Power Semiconductor Device

被引：0

作者：

Uemura, Hirofumi ^{[1
]}

Yoshida, Daichi ^{[1
]}

Matsumoto, Hiroyuki ^{[1
]}

Fujimoto, Hisashi ^{[1
]}

Okuma, Yasuhiro ^{[1
]}

机构：

[1] Fuji Elect CO LTD, 1 Fuji Machi, Hino, Tokyo, Japan

来源：

2017 19TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'17 ECCE EUROPE) | 2017年

关键词：

Simulation; Device modeling; IGBT; Free Wheel Diode (FWD);

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper, an optimal gate driving condition between switching loss and surge voltage is investigated by circuit simulation technique. An equivalent circuit model of power semiconductor devices, such as an IGBT and a FWD, are employed. Chip level transient switching waveforms of IGBT at different gate driving condition are calculated and evaluated with measurement results. Evaluation result shows good agreement with measurements. Furthermore, module level switching performance is investigated based on the simulation model. The trade-off between switching losses and surge voltages respect to the gate resistance is analyzed and discussed.

引用

页数：6

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