Electrothermal Model of Power IGBT Module for Circuit Simulations

被引：0
|
作者：
Pribytny, P. [1 ]
Chvala, A. [1 ]
Marek, J. [1 ]
Donoval, D. [1 ]
机构：
[1] Slovak Univ Technol Bratislava, Inst Elect & Photon, Ilkovicova 3, Bratislava 81219, Slovakia
来源：
2020 13TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS (ASDAM 2020) | 2020年
基金：
欧盟地平线“2020”;
关键词：
D O I：
10.1109/ASDAM50306.2020.9393867
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents electrothermal circuit model of power IGBT module for circuit simulations. The model interconnects existing models of single IGBT and our proposed thermal model which allows thermal coupling of IGBT transistors in the module. The model is calibrated automatically by MATLAB. The advantage of the model and methodology is they simplicity, high accuracy and automatic calibration.
引用
收藏
页码：96 / 99
页数：4
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