Review-The Current and Emerging Applications of the III-Nitrides

被引:74
|
作者
Zhou, Chuanle [1 ]
Ghods, Amirhossein [1 ]
Saravade, Vishal G. [1 ]
Patel, Paresh V. [1 ]
Yunghans, Kelcy L. [1 ]
Ferguson, Cameron [1 ]
Feng, Yining [2 ]
Kucukgok, Bahadir [2 ]
Lu, Na [2 ]
Ferguson, Ian T. [1 ]
机构
[1] Missouri Univ Sci & Technol, Elect & Comp Eng, Rolla, MO 65409 USA
[2] Purdue Univ, Lyles Sch Civil Engn, Sch Mat Engn, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
基金
美国国家科学基金会;
关键词
LIGHT-EMITTING-DIODES; BAND-GAP; THERMOELECTRIC PROPERTIES; BLUE-LIGHT; FREESTANDING GAN; ENERGY; DEVICES; GROWTH; FILMS; INN;
D O I
10.1149/2.0101712jss
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
III-Nitrides are attracting considerable attention as promising materials for a wide variety of applications due to their wide coverage of direct bandgap range, high electron mobility, high thermal stability and many other exceptional properties. The light-emitting diodes based on III-Nitrides revolutionize the solid-state lighting industry. III-Nitrides based solar cells and thermoelectric generators support the sustainable energy progress, and the III-Nitrides are better alternatives for power and radio frequency (RF) electronics compared with silicon. The doped III-Nitrides' magnetic properties and sensitivity to radiation can contribute to novel spintronic and nuclear detection devices. This paper will review III-nitride material properties and their corresponding applications in LEDs, solar cells, power and radio frequency (RF) electronics, magnetic devices, thermoelectrics and nuclear detection. The typical values of electrical, optical, thermoelectric, magnetic properties are cited, the current state of art investigations are reported, and the future applications are estimated. (c) The Author(s) 2017. Published by ECS. All rights reserved.
引用
收藏
页码:Q149 / Q156
页数:8
相关论文
共 50 条
  • [41] Atomic layer etching (ALE) of III-nitrides
    Ho, Wan Ying
    Chow, Yi Chao
    Biegler, Zachary
    Qwah, Kai Shek
    Tak, Tanay
    Wissel-Garcia, Ashley
    Liu, Iris
    Wu, Feng
    Nakamura, Shuji
    Speck, James S.
    APPLIED PHYSICS LETTERS, 2023, 123 (06)
  • [42] III-nitrides show promise for telecom wavelengths
    Jiang, HX
    Lin, JY
    Hui, RQ
    Zavada, J
    LASER FOCUS WORLD, 2003, 39 (11): : S8 - S11
  • [43] Magnetic resonance investigations on group III-nitrides
    Meyer, BK
    GALLIUM NITRIDE (GAN) II, 1999, 57 : 371 - 406
  • [44] Resonant Bragg structures based on III-nitrides
    Andrey S. Bolshakov
    Vladimir V. Chaldyshev
    Wsevolod V. Lundin
    Alexey V. Sakharov
    Andrey F. Tsatsulnikov
    Maria A. Yagovkina
    Evgenii E. Zavarin
    Journal of Materials Research, 2015, 30 : 603 - 608
  • [45] Wet chemical etching survey of III-nitrides
    Cho, H
    Hays, DC
    Vartuli, CB
    Pearton, SJ
    Abernathy, CR
    MacKenzie, JD
    Ren, F
    Zolper, JC
    POWER SEMICONDUCTOR MATERIALS AND DEVICES, 1998, 483 : 265 - 270
  • [46] Cubic III-nitrides: potential photonic materials
    Onabe, K.
    Sanorpim, S.
    Kato, H.
    Kakuda, M.
    Nakamura, T.
    Nakamura, K.
    Kuboya, S.
    Katayama, R.
    QUANTUM SENSING AND NANOPHOTONIC DEVICES VIII, 2011, 7945
  • [47] Doping sources for growth of group III-nitrides
    Abernathy, CR
    Groshens, T
    Gedridge, RW
    PROCEEDINGS OF THE FIRST SYMPOSIUM ON III-V NITRIDE MATERIALS AND PROCESSES, 1996, 96 (11): : 58 - 68
  • [48] X-ray diffraction of III-nitrides
    Moram, M. A.
    Vickers, M. E.
    REPORTS ON PROGRESS IN PHYSICS, 2009, 72 (03)
  • [49] Toward Quantitative Electrochemical Nanomachining of III-Nitrides
    Zhang, Cheng
    Yuan, Ge
    Bruch, Alexander
    Xiong, Kanglin
    Tang, Hong X.
    Han, Jung
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2018, 165 (10) : E513 - E520
  • [50] Lattice Location of RE Impurities in III-Nitrides
    Vantomme, Andre
    De Vries, Bart
    Wahl, Ulrich
    RARE EARTH DOPED III-NITRIDES FOR OPTOELECTRONIC AND SPINTRONIC APPLICATIONS, 2010, 124 : 55 - 98