Review-The Current and Emerging Applications of the III-Nitrides

被引:68
|
作者
Zhou, Chuanle [1 ]
Ghods, Amirhossein [1 ]
Saravade, Vishal G. [1 ]
Patel, Paresh V. [1 ]
Yunghans, Kelcy L. [1 ]
Ferguson, Cameron [1 ]
Feng, Yining [2 ]
Kucukgok, Bahadir [2 ]
Lu, Na [2 ]
Ferguson, Ian T. [1 ]
机构
[1] Missouri Univ Sci & Technol, Elect & Comp Eng, Rolla, MO 65409 USA
[2] Purdue Univ, Lyles Sch Civil Engn, Sch Mat Engn, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
基金
美国国家科学基金会;
关键词
LIGHT-EMITTING-DIODES; BAND-GAP; THERMOELECTRIC PROPERTIES; BLUE-LIGHT; FREESTANDING GAN; ENERGY; DEVICES; GROWTH; FILMS; INN;
D O I
10.1149/2.0101712jss
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
III-Nitrides are attracting considerable attention as promising materials for a wide variety of applications due to their wide coverage of direct bandgap range, high electron mobility, high thermal stability and many other exceptional properties. The light-emitting diodes based on III-Nitrides revolutionize the solid-state lighting industry. III-Nitrides based solar cells and thermoelectric generators support the sustainable energy progress, and the III-Nitrides are better alternatives for power and radio frequency (RF) electronics compared with silicon. The doped III-Nitrides' magnetic properties and sensitivity to radiation can contribute to novel spintronic and nuclear detection devices. This paper will review III-nitride material properties and their corresponding applications in LEDs, solar cells, power and radio frequency (RF) electronics, magnetic devices, thermoelectrics and nuclear detection. The typical values of electrical, optical, thermoelectric, magnetic properties are cited, the current state of art investigations are reported, and the future applications are estimated. (c) The Author(s) 2017. Published by ECS. All rights reserved.
引用
下载
收藏
页码:Q149 / Q156
页数:8
相关论文
共 50 条
  • [21] Rapid thermal processing of III-nitrides
    Hong, J
    Lee, JW
    Vartuli, CB
    MacKenzie, JD
    Donovan, SM
    Abernathy, CR
    Crockett, RV
    Pearton, SJ
    Zolper, JC
    Ren, F
    RAPID THERMAL AND INTEGRATED PROCESSING VI, 1997, 470 : 401 - 406
  • [22] Dynamical and thermodynamic properties of III-nitrides
    Pereira, LS
    Santos, AM
    Alves, JLA
    Alves, HWL
    Leite, JR
    MICROELECTRONICS JOURNAL, 2003, 34 (5-8) : 655 - 657
  • [23] Design and epitaxy of structural III-nitrides
    Li, Jinchai
    Lin, Wei
    Yang, Weihuang
    Cai, Weizhi
    Pan, Qunfeng
    Lin, Xuejiao
    Li, Shuping
    Chen, Hangyang
    Liu, Dayi
    Cai, Jiafa
    Yu, Xin
    Kang, Junyong
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (03) : 478 - 481
  • [24] The optical properties of cubic III-nitrides
    Lischka, K
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2000, 177 (01): : 135 - 143
  • [25] The current status of plasma assisted MBE growth of group III-nitrides
    Foxon, CT
    Hughes, OH
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1998, 9 (03) : 227 - 230
  • [26] The current status of plasma assisted MBE growth of group III-nitrides
    C. T Foxon
    O. H Hughes
    Journal of Materials Science: Materials in Electronics, 1998, 9 : 227 - 230
  • [27] Epitaxy of III-nitrides on two-dimensional materials and its applications
    Xu, Yu
    Wang, Jianfeng
    Cao, Bing
    Xu, Ke
    CHINESE PHYSICS B, 2022, 31 (11)
  • [28] First-principles calculations for defects and impurities: Applications to III-nitrides
    Van De Walle, C.G. (vandewalle@parc.com), 1600, American Institute of Physics Inc. (95):
  • [29] First-principles calculations for defects and impurities: Applications to III-nitrides
    Van de Walle, CG
    Neugebauer, J
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (08) : 3851 - 3879
  • [30] III-nitrides: Growth, characterization, and properties
    1600, American Institute of Physics Inc. (87):