Review-The Current and Emerging Applications of the III-Nitrides

被引:68
|
作者
Zhou, Chuanle [1 ]
Ghods, Amirhossein [1 ]
Saravade, Vishal G. [1 ]
Patel, Paresh V. [1 ]
Yunghans, Kelcy L. [1 ]
Ferguson, Cameron [1 ]
Feng, Yining [2 ]
Kucukgok, Bahadir [2 ]
Lu, Na [2 ]
Ferguson, Ian T. [1 ]
机构
[1] Missouri Univ Sci & Technol, Elect & Comp Eng, Rolla, MO 65409 USA
[2] Purdue Univ, Lyles Sch Civil Engn, Sch Mat Engn, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
基金
美国国家科学基金会;
关键词
LIGHT-EMITTING-DIODES; BAND-GAP; THERMOELECTRIC PROPERTIES; BLUE-LIGHT; FREESTANDING GAN; ENERGY; DEVICES; GROWTH; FILMS; INN;
D O I
10.1149/2.0101712jss
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
III-Nitrides are attracting considerable attention as promising materials for a wide variety of applications due to their wide coverage of direct bandgap range, high electron mobility, high thermal stability and many other exceptional properties. The light-emitting diodes based on III-Nitrides revolutionize the solid-state lighting industry. III-Nitrides based solar cells and thermoelectric generators support the sustainable energy progress, and the III-Nitrides are better alternatives for power and radio frequency (RF) electronics compared with silicon. The doped III-Nitrides' magnetic properties and sensitivity to radiation can contribute to novel spintronic and nuclear detection devices. This paper will review III-nitride material properties and their corresponding applications in LEDs, solar cells, power and radio frequency (RF) electronics, magnetic devices, thermoelectrics and nuclear detection. The typical values of electrical, optical, thermoelectric, magnetic properties are cited, the current state of art investigations are reported, and the future applications are estimated. (c) The Author(s) 2017. Published by ECS. All rights reserved.
引用
下载
收藏
页码:Q149 / Q156
页数:8
相关论文
共 50 条
  • [11] Group III-Nitrides Nanostructures
    Perez-Caro, M.
    Ramirez-Lopez, M.
    Rojas-Ramirez, J. S.
    Martinez-Velis, I.
    Casallas-Moreno, Y.
    Gallardo-Hernandez, S.
    Babu, B. J.
    Velumani, S.
    Lopez-Lopez, M.
    ADVANCED SUMMER SCHOOL IN PHYSICS 2011 (EAV 2011), 2012, 1420 : 164 - 168
  • [12] Growth of III-nitrides by MBE
    Sampath, AV
    Iliopoulos, E
    Battacharyya, A
    Friel, I
    Iyer, S
    Cabalu, J
    Moustakas, TD
    STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS XXXVI AND WIDE BANDGAP SEMICONDUCTORS FOR PHOTONIC AND ELECTRONIC DEVICES AND SENSORS II, 2002, 2002 (03): : 46 - 57
  • [13] Resonant Tunneling in III-Nitrides
    Litvinov, Vladimir I.
    PROCEEDINGS OF THE IEEE, 2010, 98 (07) : 1249 - 1254
  • [14] The III-Nitrides as a Universal Compound Semiconductor Material: A Review
    Zhou, Chuanle
    Ghods, Amirhossein
    Saravade, Vishal G.
    Patel, Paresh, V
    Yunghans, Kelcy L.
    Ferguson, Cameron
    Feng, Yining
    Jiang, Xiaodong
    Kucukgok, Bahadir
    Lu, Na
    Ferguson, Ian
    WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 18, 2017, 77 (06): : 3 - 21
  • [15] Van der Waals Epitaxy of III-Nitrides and Its Applications
    Chen, Qi
    Yin, Yue
    Ren, Fang
    Liang, Meng
    Yi, Xiaoyan
    Liu, Zhiqiang
    MATERIALS, 2020, 13 (17)
  • [16] Transmutation doping of III-nitrides
    Popovici, G
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 572 : 519 - 522
  • [17] Optical characterization of III-nitrides
    Monemar, B
    Paskov, PP
    Paskova, T
    Bergman, JP
    Pozina, G
    Chen, WM
    Hai, PN
    Buyanova, IA
    Amano, H
    Akasaki, I
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 93 (1-3): : 112 - 122
  • [18] Perspectives and recent advances of two-dimensional III-nitrides: Material synthesis and emerging device applications
    Wu, Yuanpeng
    Wang, Ping
    Lee, Woncheol
    Aiello, Anthony
    Deotare, Parag
    Norris, Theodore
    Bhattacharya, Pallab
    Kira, Mackillo
    Kioupakis, Emmanouil
    Mi, Zetian
    APPLIED PHYSICS LETTERS, 2023, 122 (16)
  • [19] A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges
    Monavarian, Morteza
    Rashidi, Arman
    Feezell, Daniel
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2019, 216 (01):
  • [20] Intersubband transitions in nonpolar and semipolar III-nitrides: Materials, devices, and applications
    Mudiyanselage, Dinusha Herath
    Wang, Dawei
    Zhao, Yuji
    Fu, Houqiang
    JOURNAL OF APPLIED PHYSICS, 2022, 131 (21)