Theoretical Analysis of High-field Hole Transport in Germanium and Silicon Nanowires

被引：0
|
作者：
Tanaka, Hajime [1 ]
Suda, Jun [1 ]
Kimoto, Tsunenobu [1 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
来源：
2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | 2016年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-field hole transport in Ge nanowires was studied using Boltzmann's transport equation. The behavior of drift velocity was analyzed based on the highly non-parabolic valence band structure. High-field hole transport properties in Si nanowires were also calculated, and the differences between Ge and Si nanowires were discussed.
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页码：192 / 193
页数：2
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