Theoretical Analysis of High-field Hole Transport in Germanium and Silicon Nanowires

被引：0
|
作者：
Tanaka, Hajime [1 ]
Suda, Jun [1 ]
Kimoto, Tsunenobu [1 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
来源：
2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | 2016年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-field hole transport in Ge nanowires was studied using Boltzmann's transport equation. The behavior of drift velocity was analyzed based on the highly non-parabolic valence band structure. High-field hole transport properties in Si nanowires were also calculated, and the differences between Ge and Si nanowires were discussed.
引用
收藏
页码：192 / 193
页数：2
相关论文
共 50 条
  • [31] IMPROVED HIGH-FIELD ELECTROREFLECTANCE SPECTRA OF GERMANIUM
    HANDLER, P
    JASPERSO.SN
    KOEPPEN, S
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (01): : 32 - &
  • [32] ELECTRON-HOLE INTERACTION AND HIGH-FIELD TRANSPORT OF PHOTOEXCITED ELECTRONS IN GAAS
    OSMAN, MA
    FERRY, DK
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (12) : 5330 - 5336
  • [33] HIGH-FIELD TRANSPORT IN PBTE
    JANTSCH, W
    ROZENBERGS, J
    HEINRICH, H
    [J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 103 - 106
  • [34] HIGH-FIELD TRANSPORT IN PBTE
    JANTSCH, W
    ROZENBERGS, J
    HEINRICH, H
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (06): : 704 - 704
  • [35] Semiconductivity Transition in Silicon Nanowires by Hole Transport Layer
    Shalabny, Awad
    Buonocore, Francesco
    Celino, Massimo
    Shalev, Gil
    Zhang, Lu
    Wu, Weiwei
    Li, Peixian
    Arbiol, Jordi
    Bashouti, Muhammad Y.
    [J]. NANO LETTERS, 2020, 20 (11) : 8369 - 8374
  • [36] Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation
    Tanaka, H.
    Suda, J.
    Kimoto, T.
    [J]. 33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, 864
  • [37] HIGH-FIELD DIFFUSIVITY OF ELECTRONS IN SILICON
    PERSKY, G
    BARTELINK, DJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4414 - +
  • [38] Unified bulk mobility model for low- and high-field transport in silicon
    Schenk, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (02) : 814 - 831
  • [39] THEORY OF HIGH-FIELD ELECTRON-TRANSPORT AND IMPACT IONIZATION IN SILICON DIOXIDE
    ARNOLD, D
    CARTIER, E
    DIMARIA, DJ
    [J]. PHYSICAL REVIEW B, 1994, 49 (15): : 10278 - 10297
  • [40] Current transport and high-field reliability of aluminum/hafnium oxide/silicon structure
    Sen, B
    Wong, H
    Filip, V
    Choi, HY
    Sarkar, CK
    Chan, M
    Kok, CW
    Poon, MC
    [J]. THIN SOLID FILMS, 2006, 504 (1-2) : 312 - 316
12345