Impacts of energy relaxation process on quasi-ballistic hole transport capability in germanium and silicon nanowires

被引：2
|
作者：
Tanaka, H. [1 ]
Suda, J. [1 ]
Kimoto, T. [1 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2018年 / 123卷 / 02期
基金：
日本学术振兴会;
关键词：
STRAIN; GE; SI;
D O I：
10.1063/1.5010052
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The quasi-ballistic hole transport in germanium and silicon nanowires was theoretically investigated by solving the Boltzmann transport equation taking account of phonon scattering in an atomistic framework. Comparison of quasi-ballistic hole transport capabilities between germanium and silicon nanowires showed that the transmission coefficients for the two materials are similar. Then, the behavior of forward and backward current fluxes was analyzed focusing on the impact of energy relaxation process. The slower energy relaxation of holes in germanium nanowires leads to a longer distance where backscattering enables holes to return to the source. This cancels the benefit of the longer mean free path of holes in germanium nanowires, resulting in similar transmission coefficients in germanium and silicon nanowires. Published by AIP Publishing.
引用
收藏
页数：7
相关论文
共 16 条
  • [1] Impacts of energy relaxation process on quasi-ballistic hole transport capability in germanium and silicon nanowires
    [J]. Tanaka, H. (tanaka@semicon.kuee.kyoto-u.ac.jp), 1600, American Institute of Physics Inc. (123):
  • [2] Theoretical Analysis of Quasi-ballistic Hole Transport in Ge and Si Nanowires Focusing on Energy Relaxation Process
    Tanaka, Hajime
    Suda, Jun
    Kimoto, Tsunenobu
    [J]. 2017 SILICON NANOELECTRONICS WORKSHOP (SNW), 2017, : 35 - 36
  • [3] Quasi-ballistic thermal transport in silicon carbide nanowires
    Anufriev, Roman
    Wu, Yunhui
    Volz, Sebastian
    Nomura, Masahiro
    [J]. APPLIED PHYSICS LETTERS, 2024, 124 (02)
  • [4] Analysis of ballistic and quasi-ballistic hole transport properties in germanium nanowires based on an extended "Top of the Barrier" model
    Tanaka, Hajime
    Suda, Jun
    Kimoto, Tsunenobu
    [J]. SOLID-STATE ELECTRONICS, 2016, 123 : 143 - 149
  • [5] Quasi-Ballistic Hole Transport in an AlGaN/GaN Nanowire
    Mastro, M. A.
    Kim, H. -Y.
    Ahn, J.
    Kim, J.
    Hite, J.
    Eddy, C. R., Jr.
    [J]. WIDE-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 11 -AND- STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 52 (SOTAPOCS 52), 2010, 28 (04): : 47 - 52
  • [6] Quasi-ballistic thermal phonon transport in nanostructured Si nanowires
    Nomura, Masahiro
    Anufriev, Roman
    [J]. 2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019,
  • [7] Quasi-ballistic electron transport through silicon nano crystals
    Mori, Nobuya
    Minari, Hideki
    Uno, Shigeyasu
    Mizuta, Hiroshi
    Koshida, Nobuyuki
    [J]. 16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16), 2009, 193
  • [8] Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation
    Tanaka, Hajime
    Suda, Jun
    Kimoto, Tsunenobu
    [J]. 2017 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2017), 2017, : 277 - 280
  • [9] Quasi-Ballistic Heat Conduction due to Levy Phonon Flights in Silicon Nanowires
    Anufriev, Roman
    Gluchko, Sergei
    Volz, Sebastian
    Nomura, Masahiro
    [J]. ACS NANO, 2018, 12 (12) : 11928 - 11935
  • [10] Joule heating under quasi-ballistic transport conditions in bulk and strained silicon devices
    Pop, E
    Rowlette, JA
    Dutton, RW
    Goodson, KE
    [J]. SISPAD: 2005 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2005, : 307 - 310
12