Large-signal compression-current measurements in high-power microwave pin photodiodes

被引：15
|
作者：
Williams, KJ [1 ]
Esman, RD [1 ]
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
来源：
ELECTRONICS LETTERS | 1999年 / 35卷 / 01期
关键词：
D O I：
10.1049/el:19990057
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors present the first large-single compression measurements for surface-illuminated pin microwave photodetectors. The maximum RI; power delivered by the photodiodes was +12, +17 and +20dBm for bandwidths of 25, 3 and 1GHz, respectively.
引用
收藏
页码：82 / 84
页数：3
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