High-power InAlAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission

被引：1

作者：

K.S.Zhuravlev ^{[1
]}

A.L.Chizh ^{[2
]}

K.B.Mikitchuk ^{[2
]}

A.M.Gilinsky ^{[1
]}

I.B.Chistokhin ^{[1
]}

N.A.Valisheva ^{[1
]}

D.V.Dmitriev ^{[1
]}

A.I.Toropov ^{[1
]}

M.S.Aksenov ^{[1
]}

机构：

[1] A.V.Rzhanov Institute of Semiconductor Physics,The Siberian Branch of the Russian Academy of Sciences

[2] Laboratory of Microwave Photonics,SSPA “Optics,Optoelectronics and Laser Technology” of National Academy of Sciences of Belarus

来源：

Journal of Semiconductors | 2022年 / 43卷 / 01期

基金：

俄罗斯科学基金会;

关键词：

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

摘要：

The design, manufacturing and DC and microwave characterization of high-power Schottky barrier In Al As/In Ga As back-illuminated mesa structure photodiodes are presented. The photodiodes with 10 and 15 μm mesa diameters operate at≥40 and 28 GHz, respectively, have the output RF power as high as 58 m W at a frequency of 20 GHz, the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness, and a photodiode dark current as low as 0.04 n A. We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in highspeed analog transmission lines with stringent requirements for phase noise.

引用

页码：48 / 52

页数：5

共 50 条

[1] High-power InAlAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission
Zhuravlev, K. S.
Chizh, A. L.
Mikitchuk, K. B.
Gilinsky, A. M.
Chistokhin, I. B.
Valisheva, N. A.
Dmitriev, D., V
Toropov, A., I
Aksenov, M. S.
JOURNAL OF SEMICONDUCTORS, 2022, 43 (01)
[2] High-power InAlAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission附视频
KSZhuravlev
ALChizh
KBMikitchuk
AMGilinsky
IBChistokhin
NAValisheva
DVDmitriev
AIToropov
MSAksenov
Journal of Semiconductors, 2022, (01) : 48 - 52
[3] High-power microwave photodiodes with Schottky contact based on InAlAs/InGaAs/InP heteroepitaxial structures
Zhuravlev, K. S.
Valisheva, N. A.
Aksenov, Ms.
Dmitriev, D. D.
Toropov, A. I.
Chistokhin, I. B.
Gilinsky, A. M.
Protasov, D. Y.
Malyshev, S. A.
Chizh, A. L.
Mikitchuk, K. B.
2019 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM (IWS 2019), 2019,
[4] High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines
Chizh, A. L.
Mikitchuk, K. B.
Zhuravlev, K. S.
Dmitriev, D., V
Toropov, A., I
Valisheva, N. A.
Aksenov, M. S.
Gilinsky, A. M.
Chistokhin, I. B.
TECHNICAL PHYSICS LETTERS, 2019, 45 (07) : 739 - 741
[5] High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines
A. L. Chizh
K. B. Mikitchuk
K. S. Zhuravlev
D. V. Dmitriev
A. I. Toropov
N. A. Valisheva
M. S. Aksenov
A. M. Gilinsky
I. B. Chistokhin
Technical Physics Letters, 2019, 45 : 739 - 741
[6] High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures
Zhuravlev, K. S.
Gilinskii, A. M.
Chistokhin, I. B.
Valisheva, N. A.
Dmitriev, D. V.
Toropov, A. I.
Aksenov, M. S.
Chizh, A. L.
Mikitchuk, K. B.
TECHNICAL PHYSICS, 2021, 66 (09) : 1072 - 1077
[7] High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures
K. S. Zhuravlev
A. M. Gilinsky
I. B. Chistokhin
N. A. Valisheva
D. V. Dmitriev
A. I. Toropov
M. S. Aksenov
A. L. Chizh
K. B. Mikitchuk
Technical Physics, 2021, 66 : 1072 - 1077
[8] High-Speed High-Power InAlAs/InGaAs/InP Schottky Photodiode
Chizh, A.
Malyshev, S.
Mikitchuk, K.
2015 INTERNATIONAL TOPICAL MEETING ON MICROWAVE PHOTONICS (MWP), 2015,
[9] High-Power Microwave Photodiodes
Beling, Andreas
2014 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC), 2014,
[10] High-Power Photodiodes for Analog Applications
Beling, Andreas
Campbell, Joe C.
Li, Kejia
Li, Qinglong
Wang, Ye
Woodson, Madison E.
Xie, Xiaojun
Yang, Zhanyu
IEICE TRANSACTIONS ON ELECTRONICS, 2015, E98C (08): : 764 - 768

← 1 2 3 4 5 →