High-Speed High-Power InAlAs/InGaAs/InP Schottky Photodiode

被引：0
|
作者：
Chizh, A. [1 ]
Malyshev, S. [1 ]
Mikitchuk, K. [1 ]
机构：
[1] Stepanov Inst Phys, Lab Semicond Optoelect, Minsk, BELARUS
来源：
2015 INTERNATIONAL TOPICAL MEETING ON MICROWAVE PHOTONICS (MWP) | 2015年
关键词：
high-speed high-power photodiode; Schottky photodiode; InGaAs; DESIGN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a new high-power photodiode design based on Schottky-barrier contact to reduce thermal resistance, which limit the output microwave power of photodiodes with small active area, is presented. High-speed high-power InAlAs/InGaAs/InP Schottky photodiode has been fabricated and characterized.
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页数：4
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