Surface morphology of GaN surfaces during molecular beam epitaxy

被引：0
|
作者：
Feenstra, RM [1 ]
Chen, HJ
Ramachandran, V
Lee, CD
Smith, AR
Northrup, JE
Zywietz, T
Neugebauer, J
Greve, DW
机构：
[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA
[2] Ohio Univ, Dept Phys & Astron, Athens, OH 45701 USA
[3] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA
[4] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany
[5] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA
来源：
SURFACE REVIEW AND LETTERS | 2000年 / 7卷 / 5-6期
关键词：
D O I：
10.1142/S0218625X00000804
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The reconstruction and surface morphology of gallium nitride (0001) and (0001) surfaces are studied using scanning probe microscopy and reflection high energy electron diffraction. Results for bare GaN surfaces are summarized, and changes in the surface structure and morphology due to codeposition of indium or magnesium during growth are discussed.
引用
收藏
页码：601 / 606
页数：6
相关论文
共 50 条
  • [31] Influence of gallium surface saturation on GaN nanowire polytype selection during molecular-beam epitaxy
    Lu, H.
    Moniri, S.
    Reese, C.
    Jeon, S.
    Katcher, A.
    Hill, T.
    Deng, H.
    Goldman, R. S.
    [J]. APPLIED PHYSICS LETTERS, 2021, 119 (03)
  • [32] SURFACE RECONSTRUCTION AND MORPHOLOGY OF INAS GROWN BY MOLECULAR-BEAM EPITAXY
    SUGIYAMA, K
    [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 75 (03) : 435 - 440
  • [33] Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy
    Galopin, E.
    Largeau, L.
    Patriarche, G.
    Travers, L.
    Glas, F.
    Harmand, J. C.
    [J]. NANOTECHNOLOGY, 2011, 22 (24)
  • [34] GaN film growth on LiNbO3 surfaces using molecular beam epitaxy
    Man Hoai Nam
    Goo, Son Chul
    Kim, Moon Deock
    Yang, Woochul
    [J]. APCTP-ASEAN WORKSHOP ON ADVANCED MATERIALS SCIENCE AND NANOTECHNOLOGY (AMSN08), 2009, 187
  • [35] Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopy
    Xue, QK
    Xue, QZ
    Kuwano, S
    Sakurai, T
    Ohno, T
    Tsong, IST
    Qiu, XG
    Segawa, Y
    [J]. THIN SOLID FILMS, 2000, 367 (1-2) : 149 - 158
  • [36] GaN Nanowires Grown by Molecular Beam Epitaxy
    Bertness, Kris A.
    Sanford, Norman A.
    Davydov, Albert V.
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2011, 17 (04) : 847 - 858
  • [37] Mg doping of GaN by molecular beam epitaxy
    Lieten, R. R.
    Motsnyi, V.
    Zhang, L.
    Cheng, K.
    Leys, M.
    Degroote, S.
    Buchowicz, G.
    Dubon, O.
    Borghs, G.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 44 (13)
  • [38] Surface roughness of GaN and thin AlGaN layers grown by molecular beam epitaxy
    Liu, XY
    Andersson, TG
    [J]. APPLIED SURFACE SCIENCE, 2004, 226 (04) : 331 - 334
  • [39] Blue photoluminescence activated by surface states in GaN grown by molecular beam epitaxy
    Reshchikov, MA
    Visconti, P
    Morkoç, H
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (02) : 177 - 179
  • [40] Mg-modified surface kinetics of the GaN growth by molecular beam epitaxy
    Daudin, B
    Mula, G
    Peyla, P
    [J]. PHYSICAL REVIEW B, 2000, 61 (15): : 10330 - 10335
12345