Surface morphology of GaN surfaces during molecular beam epitaxy

被引：0
|
作者：
Feenstra, RM [1 ]
Chen, HJ
Ramachandran, V
Lee, CD
Smith, AR
Northrup, JE
Zywietz, T
Neugebauer, J
Greve, DW
机构：
[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA
[2] Ohio Univ, Dept Phys & Astron, Athens, OH 45701 USA
[3] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA
[4] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany
[5] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA
来源：
SURFACE REVIEW AND LETTERS | 2000年 / 7卷 / 5-6期
关键词：
D O I：
10.1142/S0218625X00000804
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The reconstruction and surface morphology of gallium nitride (0001) and (0001) surfaces are studied using scanning probe microscopy and reflection high energy electron diffraction. Results for bare GaN surfaces are summarized, and changes in the surface structure and morphology due to codeposition of indium or magnesium during growth are discussed.
引用
收藏
页码：601 / 606
页数：6
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