Laser machining of GaN-on-diamond wafers

被引：1

作者：

Babic, Dubravko I. ^{[1
]}

Diduck, Quentin ^{[1
]}

Faili, Firooz ^{[1
]}

Wasserbauer, John ^{[1
]}

Lowe, Frank ^{[1
]}

Francis, Daniel ^{[1
]}

Ejeckam, Felix ^{[1
]}

机构：

[1] Grp 4 Labs Inc, Fremont, CA 94539 USA

来源：

关键词：

Gallium nitride on diamond; Laser machining; AlGaN/GaN high-electron mobility transistors; Via processing in diamond; Diamond wafer dicing; POLYCRYSTALLINE DIAMOND; THERMAL-CONDUCTIVITY; CVD-DIAMOND; FILMS; ABLATION; GROWTH;

D O I：

10.1016/j.diamond.2011.03.017

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The commercialization of gallium-nitride microwave circuits on diamond substrates requires chip-dicing technology and via formation process compatible with standard semiconductor processes. This paper discusses issues related to dicing and drilling of GaN-on-diamond wafers for RF power transistor applications (die size < 1 mm(2)) using laser micromachining. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：675 / 681

页数：7

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