Development of GaN-on-Diamond HEMT Using Diamond Substrate with Large Area

被引：0
|
作者：
Hiza, Shuichi [1 ]
Imamura, Ken [1 ]
Shirayanagi, Yusuke [1 ]
Yoshitsugu, Koji [1 ]
Takiguchi, Yuki [1 ]
Nishimura, Kunihiko [1 ]
Takagi, Hideki [2 ]
Yamada, Hideaki [3 ]
Kubota, Akihisa [4 ]
Yamamuka, Mikio [1 ]
机构：
[1] Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1, Tsukaguchi-Honmachi, Hyogo, Amagasaki,661-8661, Japan
[2] Device Technology Research Institute, AIST, 1-2-1, Namiki, Ibaraki, Tsukuba,305-8564, Japan
[3] Advanced Power Electronics Research Center, AIST, 1-8-31, Midorigaoka, Ikeda, Osaka,563-8577, Japan
[4] Faculty of Advanced Science and Technology, Kumamoto University, 2-39-1, Kurokami, Chuo-ku, Kumamoto-shi, Kumamoto,860-8555, Japan
来源：
IEEJ Transactions on Electronics, Information and Systems | 2022年 / 142卷 / 03期
关键词：
Compendex;
D O I：
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学科分类号：
摘要：
Diamonds
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页码：354 / 359
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