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Laser machining of GaN-on-diamond wafers

被引：1
|
作者：
Babic, Dubravko I. [1 ]
Diduck, Quentin [1 ]
Faili, Firooz [1 ]
Wasserbauer, John [1 ]
Lowe, Frank [1 ]
Francis, Daniel [1 ]
Ejeckam, Felix [1 ]
机构：
[1] Grp 4 Labs Inc, Fremont, CA 94539 USA
来源：
DIAMOND AND RELATED MATERIALS | 2011年 / 20卷 / 5-6期
关键词：
Gallium nitride on diamond; Laser machining; AlGaN/GaN high-electron mobility transistors; Via processing in diamond; Diamond wafer dicing; POLYCRYSTALLINE DIAMOND; THERMAL-CONDUCTIVITY; CVD-DIAMOND; FILMS; ABLATION; GROWTH;
D O I：
10.1016/j.diamond.2011.03.017
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The commercialization of gallium-nitride microwave circuits on diamond substrates requires chip-dicing technology and via formation process compatible with standard semiconductor processes. This paper discusses issues related to dicing and drilling of GaN-on-diamond wafers for RF power transistor applications (die size < 1 mm(2)) using laser micromachining. (C) 2011 Elsevier B.V. All rights reserved.
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收藏
页码：675 / 681
页数：7
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