The effect of growth stoichiometry on the GaN dislocation core structure

被引：0

作者：

Baines, MQ ^{[1
]}

Cherns, D ^{[1
]}

Hsu, JWP ^{[1
]}

Manfra, MJ ^{[1
]}

机构：

[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

来源：

GAN AND RELATED ALLOYS-2002 | 2003年 / 743卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Plan-view transmission electron microscopy was used to study the core structures of different dislocations in (0001) GaN layers grown under Ga-rich and Ga-lean conditions by molecular beam epitaxy. In Ga-rich samples at least one third of mixed type dislocations were open-core, and edge dislocations were observed to be closed-core. In contrast, under Ga-lean conditions, all dislocations were observed to be closed-core, and many were associated with pits at the sample surface. High resolution Studies of the open core dislocations revealed that many were decorated with a disordered deposit, the origin of which is discussed.

引用

页码：41 / 46

页数：6

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