The effect of growth stoichiometry on the GaN dislocation core structure

被引：0

作者：

Baines, MQ ^{[1
]}

Cherns, D ^{[1
]}

Hsu, JWP ^{[1
]}

Manfra, MJ ^{[1
]}

机构：

[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

来源：

GAN AND RELATED ALLOYS-2002 | 2003年 / 743卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Plan-view transmission electron microscopy was used to study the core structures of different dislocations in (0001) GaN layers grown under Ga-rich and Ga-lean conditions by molecular beam epitaxy. In Ga-rich samples at least one third of mixed type dislocations were open-core, and edge dislocations were observed to be closed-core. In contrast, under Ga-lean conditions, all dislocations were observed to be closed-core, and many were associated with pits at the sample surface. High resolution Studies of the open core dislocations revealed that many were decorated with a disordered deposit, the origin of which is discussed.

引用

页码：41 / 46

页数：6

共 50 条

[41] Ab initio calculation of the stoichiometry and structure of the (0001) surfaces of GaN and AlN
Fritsch, J
Sankey, OF
Schmidt, KE
Page, JB
PHYSICAL REVIEW B, 1998, 57 (24) : 15360 - 15371
[42] Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy
Hsu, JWP
Manfra, MJ
Chu, SNG
Chen, CH
Pfeiffer, LN
Molnar, RJ
APPLIED PHYSICS LETTERS, 2001, 78 (25) : 3980 - 3982
[43] Novel growth of GaN with low dislocation density for UV lasers
Aoyagi, Y
Tanaka, S
Takeuchi, M
Hirayama, H
LEOS 2001: 14TH ANNUAL MEETING OF THE IEEE LASERS & ELECTRO-OPTICS SOCIETY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 687 - 688
[44] Defects in GaN: core structure of screw dislocations
Liliental-Weber, Z
Zakharov, D
Jasinski, J
O'Keefe, MA
MICROSCOPY OF SEMICONDUCTING MATERIALS 2003, 2003, (180): : 175 - 182
[45] Calculation of electron mobility and effect of dislocation scattering in GaN
Kundu, Janardan
Sarkar, C. K.
Mallick, P. S.
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2007, 10 (01) : 1 - 3
[46] Effect of initial process in formation of grain structure in GaN growth by MBE
Sasamoto, H
Kushi, K
Nakamura, S
Sugihara, D
Kikuchi, A
Kishino, K
BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 520 - 523
[47] Mushroom structure of GaN template for epitaxial growth of GaN
Lee, Sung Bo
Kwon, Tae-Wan
Park, Jungwon
Choi, Won Jin
Park, Hae Sung
JOURNAL OF CRYSTAL GROWTH, 2012, 351 (01) : 101 - 106
[48] Epitaxial growth of GaN/Pd/GaN sandwich structure
Tanaka, U
Maruyama, T
Akimota, K
JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 444 - 447
[49] Epitaxial growth of GaN/Pd/GaN sandwich structure
Tanaka, Uitsu
Maruyama, Takahiro
Akimoto, Katsuhiro
Journal of Crystal Growth, 1999, 201 : 444 - 447
[50] Dislocation density and band structure effects on spin dynamics in GaN
Brimont, Christelle
Gallart, Mathieu
Gadalla, Atef
Cregut, Olivier
Hoenerlage, Bernd
Gilliot, Pierre
JOURNAL OF APPLIED PHYSICS, 2009, 105 (02)

← 1 2 3 4 5 →