No dangling bond in Si dislocation core structure

被引：0
|
作者：
Inst of Semiconductors, The Chinese Acad of Sciences, Beijing, China [1 ]
机构：
来源：
Pan Tao Ti Hsueh Pao | / 6卷 / 406-412期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] DANGLING BOND IN A SI-H
    BARYAM, Y
    JOANNOPOULOS, JD
    PHYSICAL REVIEW LETTERS, 1986, 56 (20) : 2203 - 2206
  • [2] Electronic Properties of a Single Dangling Bond and of Dangling Bond Wires on a Si(001):H Surface
    Kawai, Hiroyo
    Neucheva, Olga
    Yap, Tiong Leh
    Joachim, Christian
    Saeys, Mark
    ON-SURFACE ATOMIC WIRES AND LOGIC GATES, 2017, : 105 - 120
  • [3] DANGLING BOND SURFACE STATES ON SI AND GAAS
    CIRACI, S
    HARRISON, WA
    GREGORY, P
    SPICER, WE
    WAGNER, LF
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (03): : 214 - 214
  • [4] PROS AND CONS FOR DANGLING BONDS AT DISLOCATION CORES IN SI
    POHORYLES, B
    PHILOSOPHICAL MAGAZINE LETTERS, 1988, 58 (01) : 7 - 10
  • [5] The core structure and energy of the 90° partial dislocation in Si
    Lin, K
    Chrzan, DC
    CMES-COMPUTER MODELING IN ENGINEERING & SCIENCES, 2002, 3 (02): : 201 - 211
  • [6] ON THE STRUCTURE OF DANGLING BOND DEFECTS IN SILICON
    STUTZMANN, M
    ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE NEUE FOLGE, 1987, 151 : 211 - 222
  • [7] ELECTRONIC-STRUCTURE OF LOCALIZED SI DANGLING-BOND DEFECTS BY TUNNELING SPECTROSCOPY
    HAMERS, RJ
    DEMUTH, JE
    PHYSICAL REVIEW LETTERS, 1988, 60 (24) : 2527 - 2530
  • [8] THE ENERGY OF THE DANGLING-BOND STATES IN A-SI
    LECOMBER, PG
    SPEAR, WE
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 53 (01): : L1 - L7
  • [9] ANALYSIS OF DANGLING BOND DISTRIBUTION IN A-SI-H
    TANIGUCHI, H
    NAKAJIMA, Y
    SHARP TECHNICAL JOURNAL, 1990, (44): : 17 - 20
  • [10] Coulomb Energy Determination of a Single Si Dangling Bond
    Nguyen, T. H.
    Mahieu, G.
    Berthe, M.
    Grandidier, B.
    Delerue, C.
    Stievenard, D.
    Ebert, Ph.
    PHYSICAL REVIEW LETTERS, 2010, 105 (22)
12345