Conduction Mechanisms and Environmental Sensitivity of Solution-Processed Silicon Nanoparticle Layers for Thin-Film Transistors

被引:22
|
作者
Weis, Sebastian [2 ]
Koermer, Richard [3 ]
Jank, Michael P. M. [1 ]
Lemberger, Martin [1 ]
Otto, Michael [1 ]
Ryssel, Heiner [1 ]
Peukert, Wolfgang [3 ]
Frey, Lothar [1 ,2 ]
机构
[1] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany
[2] Univ Erlangen Nurnberg, Chair Electron Devices, D-91058 Erlangen, Germany
[3] Univ Erlangen Nurnberg, Inst Particle Technol, D-91058 Erlangen, Germany
关键词
AEROSOL SYNTHESIS; NANOWIRES;
D O I
10.1002/smll.201100703
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Room-temperature, solution-processed, silicon nanoparticle thin films show significant gating with distinct hysteresis in their current-voltage characteristics. Device performance strongly depends on measurement environment and charge transport is determined by particle surfaces. Particle encapsulation with polymethyl methacrylate or Al 2O 3 reduces hysteresis and device sensitivity against environmental influences. Both Al 2O 3 coating and UV exposure during measurements alter current transport and enhance conductivity, providing evidence for surface-dominated transport. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:2853 / 2857
页数:5
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