Electromigration: The time bomb in deep-submicron ICs

被引：27

作者：

Li, PC ^{[1
]}

Young, TK ^{[1
]}

机构：

[1] EPIC DESIGN TECHNOL INC,LAYOUT EXTRACT,SUNNYVALE,CA

来源：

IEEE SPECTRUM | 1996年 / 33卷 / 09期

关键词：

D O I：

10.1109/6.535398

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electromigration is a ticking time bomb IC design, which can trigger a system failure at some undefined future time. The phenomenon is particularly likely to afflict the thin, tightly spaced power-distribution line of deep-submicron design. One of the reasons of these problems is that electromigration failures cannot be prevented by production testing. This paper discusses how to pinpoint where the problem is likely to occur, and what to do about it.

引用

页码：75 / 78

页数：4

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