A High-voltage Silicon-On-Insulator Lateral IGBT with Segmented Trenches for Improved Short circuit Ruggedness

被引：1

作者：

Sen Zhang ^{[1
,2
]}

Ma, Jie ^{[1
]}

Luo, Min ^{[1
]}

Wang, Xiaona ^{[1
]}

He, Nailong ^{[2
]}

Song, Hua ^{[2
]}

Li, Sheng ^{[1
]}

Wei, Jiaxing ^{[1
]}

Liu, Siyang ^{[1
]}

Zhang, Long ^{[1
]}

Sun, Weifeng ^{[1
]}

机构：

[1] Southeast Univ, Sch Elect Engn Sci, Natl ASIC Syst Engn Res Ctr, Nanjing, Peoples R China

[2] CSMC Technol Corp, Wuxi, Jiangsu, Peoples R China

来源：

2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2022年

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

Silicon-on-insulator; SW; lateral IGBT; LIGBT; SOI-LIGBT; segmented trench; potential modulation; low saturation current; I-sat; short-circuit; ruggedness; LIGBT;

D O I：

10.1109/ISPSD49238.2022.9813658

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A novel LIGBT with segmented trenches (STs) is proposed for improved short circuit ruggedness in this paper. STs are inserted in the drift region of the novel structure. STs can be formed simultaneously with isolation trenches by one-step etching and subsequently polysilicon refilling. The polysilicon in STs is connected to the emitter by metal interconnection. The electric potential modulation and hole blocking effect concepts are proposed in this work In the saturation area, the electronic potential at the end of N-type inversion channel can be lowered by grounded STs, resulting in weakened electron injection. In the liner area, the holes from collector are blocked by STs, and thus the conductivity modulation is enhanced. As a result, the novel structure obtains an ultra-low I-sat without increasing V-on and 406% increase in t(sc).

引用

页码：309 / 312

页数：4

共 50 条

[41] An Improved Fault Protection and Identification Driving Technology for High-voltage High-power IGBT
Li, Xin
Liu, Yixin
Wang, Fengchuan
Huang, Xianjin
2020 IEEE 9TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE (IPEMC2020-ECCE ASIA), 2020, : 2184 - 2190
[42] Temperature-Independent High Voltage Reference Design in Silicon-on-Insulator CMOS Technology
Perlinger, Adam
Subramanium, Seenivasan
Sukumar, Vinesh
Li, Harry W.
Hess, Herbert L.
IECON 2004: 30TH ANNUAL CONFERENCE OF IEEE INDUSTRIAL ELECTRONICS SOCIETY, VOL 3, 2004, : 3231 - 3234
[43] INTERRUPTION OF SHORT-CIRCUIT CURRENTS IN HIGH-VOLTAGE AC NETWORKS
BRAUN, A
EIDINGER, A
RUOSS, E
BROWN BOVERI REVIEW, 1979, 66 (04): : 240 - 254
[44] SHORT-CIRCUIT STRESSES AND STRENGTH OF HIGH-VOLTAGE POST INSULATORS
MIRI, AM
STEIN, N
ETZ ARCHIV, 1988, 10 (03): : 89 - 96
[45] REBULF technology for bulk silicon and SOI lateral high-voltage devices
Zhang, Bo
Cheng, Jianbing
Qiao, Ming
Li, Zhaoji
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 2008, : 164 - 167
[46] Compact High-Voltage Pulse Discharging Switch With IGBT Stack and Simple Gate Drive Circuit
Park, Su-Mi
Jeong, Woo-Cheol
Gang, Yun-Soo
Ryoo, Hong-Je
IEEE TRANSACTIONS ON PLASMA SCIENCE, 2023, 51 (07) : 1946 - 1952
[47] An improved transistor noise equivalent circuit model for silicon-on-insulator transistors considering the frequency dispersion effect
Du, Xingzheng
Cao, Xin
Liu, Huihua
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2022, 64 (01) : 36 - 41
[48] A 600V FS-IGBT using locally isolated P-well structures for improved short circuit ruggedness
Kim, Jisun
Kim, Sooseong
Oh, Kwang-Hoon
Yun, Chongman
2015 9TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND ECCE ASIA (ICPE-ECCE ASIA), 2015, : 823 - 828
[49] A new silicon-on-insulator lateral insulated gate bipolar transistor and lateral diode employing the separated Schottky anode for a power integrated circuit
Ji, In-Hwan
Choi, Young-Hwan
Ha, Min-Woo
Han, Min-Koo
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4B): : 2041 - 2045
[50] Transient discharge characteristics of insulator short-circuit under high voltage
Qi, Shancheng
Chang, Shuaibing
Cao, Lilu
ALEXANDRIA ENGINEERING JOURNAL, 2021, 60 (06) : 5175 - 5181

← 1 2 3 4 5 →