A High-voltage Silicon-On-Insulator Lateral IGBT with Segmented Trenches for Improved Short circuit Ruggedness

A novel LIGBT with segmented trenches (STs) is proposed for improved short circuit ruggedness in this paper. STs are inserted in the drift region of the novel structure. STs can be formed simultaneously with isolation trenches by one-step etching and subsequently polysilicon refilling. The polysilicon in STs is connected to the emitter by metal interconnection. The electric potential modulation and hole blocking effect concepts are proposed in this work In the saturation area, the electronic potential at the end of N-type inversion channel can be lowered by grounded STs, resulting in weakened electron injection. In the liner area, the holes from collector are blocked by STs, and thus the conductivity modulation is enhanced. As a result, the novel structure obtains an ultra-low I-sat without increasing V-on and 406% increase in t(sc).