A High-voltage Silicon-On-Insulator Lateral IGBT with Segmented Trenches for Improved Short circuit Ruggedness

被引：1

作者：

Sen Zhang ^{[1
,2
]}

Ma, Jie ^{[1
]}

Luo, Min ^{[1
]}

Wang, Xiaona ^{[1
]}

He, Nailong ^{[2
]}

Song, Hua ^{[2
]}

Li, Sheng ^{[1
]}

Wei, Jiaxing ^{[1
]}

Liu, Siyang ^{[1
]}

Zhang, Long ^{[1
]}

Sun, Weifeng ^{[1
]}

机构：

[1] Southeast Univ, Sch Elect Engn Sci, Natl ASIC Syst Engn Res Ctr, Nanjing, Peoples R China

[2] CSMC Technol Corp, Wuxi, Jiangsu, Peoples R China

来源：

2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2022年

基金：

中国国家自然科学基金; 国家重点研发计划;

关键词：

Silicon-on-insulator; SW; lateral IGBT; LIGBT; SOI-LIGBT; segmented trench; potential modulation; low saturation current; I-sat; short-circuit; ruggedness; LIGBT;

D O I：

10.1109/ISPSD49238.2022.9813658

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A novel LIGBT with segmented trenches (STs) is proposed for improved short circuit ruggedness in this paper. STs are inserted in the drift region of the novel structure. STs can be formed simultaneously with isolation trenches by one-step etching and subsequently polysilicon refilling. The polysilicon in STs is connected to the emitter by metal interconnection. The electric potential modulation and hole blocking effect concepts are proposed in this work In the saturation area, the electronic potential at the end of N-type inversion channel can be lowered by grounded STs, resulting in weakened electron injection. In the liner area, the holes from collector are blocked by STs, and thus the conductivity modulation is enhanced. As a result, the novel structure obtains an ultra-low I-sat without increasing V-on and 406% increase in t(sc).

引用

页码：309 / 312

页数：4

共 50 条

[1] A Silicon-On-Insulator Lateral IGBT With Segmented Trenches for Improving Short-Circuit Withstanding Capability
Zhang, Long
Ma, Jie
Luo, Min
Cui, Wangming
Liu, Peigang
Liu, Siyang
Wei, Jiaxing
Li, Sheng
Sun, Weifeng
He, Nailong
Zhang, Sen
Bai, Song
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (07) : 4042 - 4045
[2] Influence of Termination Isolation Deep-Oxide Trenches on Short-Circuit Capability in Silicon-On-Insulator Lateral IGBT
Ma, Jie
Gu, Yong
Zhang, Long
Luo, Min
Pan, Chengwu
Liu, Siyang
Sun, Weifeng
Zhu, Jing
He, Nailong
Zhang, Sen
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (10) : 5944 - 5947
[3] Short-Circuit Ruggedness of High-Voltage IGBTs
Lutz, J.
Basler, T.
2012 28TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL), 2012, : 243 - 250
[4] NOVEL HIGH-VOLTAGE SILICON-ON-INSULATOR MOSFETS
LU, Q
RATNAM, P
SALAMA, CAT
SOLID-STATE ELECTRONICS, 1992, 35 (12) : 1745 - 1750
[5] Limitation of the Short-Circuit Ruggedness of High-Voltage IGBTs
Kopta, A.
Rahimo, M.
Schlapbach, U.
Kaminski, N.
Silber, D.
2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2009, : 33 - +
[6] Analytical model for silicon-on-insulator lateral high-voltage devices using variation of lateral thickness technique
Yao, Jiafei
Guo, Yufeng
Li, Man
Huang, Xiaofeng
Lin, Hong
Ji, Xincun
Xu, Yue
JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (02)
[7] Optimized High-Voltage Analog Switch and Its Control Circuit Based on Silicon-on-Insulator Technology
Li, Zhuze
Lai, Xinquan
Ding, Chentao
Jin, Dinghai
Wang, Jiabao
Liu, Chen
ELECTRONICS, 2024, 13 (23):
[8] Characterization of an integrated High-Voltage capacitance in Silicon-On-Insulator technology
Sartori, Michele
Arosio, Martina
Baschirotto, Andrea
2023 18TH CONFERENCE ON PH.D RESEARCH IN MICROELECTRONICS AND ELECTRONICS, PRIME, 2023, : 237 - 240
[9] SILICON-ON-INSULATOR DEVICES FOR HIGH-VOLTAGE AND POWER IC APPLICATIONS
ARNOLD, E
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (07) : 1983 - 1988
[10] High-voltage, double-gate devices on silicon-on-insulator
Zingg, RP
MICROELECTRONIC ENGINEERING, 2001, 59 (1-4) : 461 - 468

← 1 2 3 4 5 →