Impact of oxygen ambient on ferroelectric properties of polar-axis-oriented CaBi4Ti4O15 films

被引:21
|
作者
Kato, K [1 ]
Tanaka, K
Suzuki, K
Kimura, T
Nishizawa, K
Miki, T
机构
[1] Natl Inst Adv Ind Sci & Technol, Moriyama Ku, 2266-98 Anagahora, Nagoya, Aichi 4638560, Japan
[2] Nagoya Inst Technol, Showa Ku, Nagoya, Aichi 4668555, Japan
关键词
D O I
10.1063/1.1883329
中图分类号
O59 [应用物理学];
学科分类号
摘要
Polar-axis oriented CaBi4Ti4O15 (CBTi144) films were fabricated on Pt foils using a complex metal alkoxide solution. The oxygen ambient during crystallization of the films impacted the crystal perfection, crystallite size, and the ferroelectric properties. The 500 mm thick film crystallized in oxygen flow had single columnar structure and in-plane grain size of about 200 nm. The Scherrer's crystallite diameter was calculated as about 110 nm. The ferroelectric properties were improved. The Pr and Ec of the film enhanced as 33.6 mu C/cm(2) and 357 kV/cm, respectively, at an applied voltage of 50 V. Voltage applied for full polarization switching was lowered by controlling oxygen stoichiometry of the film. Indeed, the polar-axis-oriented CBTi144 films would open up possibilities for devices as Pb-free ferroelectric materials. (C) 2005 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
相关论文
共 50 条
  • [31] Photoluminescence and ferroelectric properties of sol-gel-grown Eu-doped CaBi4Ti4O15 : Nd films
    Wang, Weichao
    Zheng, Haiwu
    Liu, Yuefeng
    Li, Zonghui
    Zhang, Ting
    Zhang, Weifeng
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (10)
  • [32] Effect of sintering temperature on the structural properties for CaBi4Ti4O15 compound
    Abdulmajeed, I. M.
    Ibraheem, S. H.
    JOURNAL OF OVONIC RESEARCH, 2022, 18 (04): : 499 - 505
  • [33] Effect of oxygen partial pressure on structural and optical properties of pulsed laser deposited CaBi4Ti4O15 thin films
    Emani, Sivanagi Reddy
    Raju, K. C. James
    APPLIED SURFACE SCIENCE, 2017, 397 : 49 - 56
  • [34] Bipolar resistive switching behaviours of perovskite CaBi4Ti4O15 thin films
    Lin, J. Y.
    Wu, C. L.
    MATERIALS RESEARCH INNOVATIONS, 2015, 19 : S407 - S409
  • [35] Dielectric Property of Silicate-Doped CaBi4Ti4O15 Thin Films
    Ogawa, Shota
    Kondoh, Yohta
    Kimura, Junichi
    Funakubo, Hiroshi
    Uchida, Hiroshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (09)
  • [36] Optical and dielectric properties of CaBi4Ti4O15 films prepared from sol gel route
    Tanwar, Amit
    Sreenivas, K.
    Gupta, Vinay
    ISAF: 2009 18TH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, 2009, : 164 - 168
  • [37] Dynamic ferroelectric hysteresis scaling of four-layered Aurivillius phase CaBi4Ti4O15 thin films
    Lei, Y.
    Song, D. P.
    Zhang, Y.
    Li, R. Z.
    Guo, L.
    Yang, J.
    JOURNAL OF APPLIED PHYSICS, 2025, 137 (12)
  • [38] Ferroelectric Phase Transitions in Aurivillius Structure Lead-Free CaBi4Ti4O15 and CaBi3.6Nd0.4Ti4O15 Ceramics
    Politova, E. D.
    Kaleva, G. M.
    Mosunov, A. V.
    Egorova, B. V.
    Segalla, A. G.
    Zeng, J.
    FERROELECTRICS, 2012, 429 : 88 - 94
  • [39] Effect of different sintering temperatures on the electrical properties of the CaBi4Ti4O15 ceramics
    College of Material Science and Engineering, Shandong Jianzhu University, Jinan 250101, China
    不详
    Rengong Jingti Xuebao, 2007, 2 (396-399+380):
  • [40] Piezoelectric and pyroelectric properties of Cu-doped CaBi4Ti4O15 lead-free ferroelectric ceramics
    Kwok, K. W.
    Wong, H. Y.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (09)