Effect of sintering temperature on the structural properties for CaBi4Ti4O15 compound

被引:1
|
作者
Abdulmajeed, I. M. [1 ]
Ibraheem, S. H. [2 ]
机构
[1] Univ Baghdad, Coll Sci, Dept Phys, Baghdad, Iraq
[2] Mustansiriyah Univ, Coll Basic Educ, Baghdad, Iraq
来源
JOURNAL OF OVONIC RESEARCH | 2022年 / 18卷 / 04期
关键词
Aurivillius phase; CaBi4Ti4O15; Dielectric behavior;
D O I
10.15251/JOR.2022.184.4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Polycrystalline CaBi4Ti4O15 (CBT) ceramics were successfully prepared by traditional ceramic technique. The X-ray diffraction spectrum of produced powder was studied at different temperatures (650 C, 850 C, and 1050C. The sintering temperature is very effective factor to obtained high crystallinity with very pure for CBT compound. The product structures analyzed using X-ray diffraction, it confirms, high purity polycrystalline phase formation revealed the existence of bismuth layered perovskite phase Aurivillius orthorhombic crystal structure at 1050 degrees C. The produced samples' A field emission scanning electron microscope was used to analyze the morphologies (FESEM). It shows crystallites particles in the range about 149-349 nm for the product sintered at 1050 degrees C, it shows a dense microstructure with the presence of large orthorhombic distortion. The dielectric constant and dielectric loss were measured at room temperature as a function of frequency. The dielectric constant of CBT increases in sintering temperature. Moreover, the samples sintered at 1050 degrees C exhibits good dielectric properties and lower value of tan delta.
引用
收藏
页码:499 / 505
页数:7
相关论文
共 50 条
  • [1] Effect of different sintering temperatures on the electrical properties of the CaBi4Ti4O15 ceramics
    College of Material Science and Engineering, Shandong Jianzhu University, Jinan 250101, China
    不详
    Rengong Jingti Xuebao, 2007, 2 (396-399+380):
  • [2] Neodymium substituted CaBi4Ti4O15 bismuth layered compound
    Hou, RZ
    Chen, XM
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2006, 26 (08) : 1379 - 1383
  • [3] Effect of orthorhombic distortion on dielectric and piezoelectric properties of CaBi4Ti4O15 ceramics
    Tanwar, Amit
    Sreenivas, K.
    Gupta, Vinay
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (08)
  • [4] Temperature dependence of piezoelectric properties of grain-oriented CaBi4Ti4O15 ceramics
    Ogawa, H
    Kimura, M
    Ando, A
    Sakabe, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (9B): : 5715 - 5718
  • [5] Temperature dependence of piezoelectric properties of grain-oriented CaBi4Ti4O15 ceramics
    Ogawa, H., 1600, Japan Society of Applied Physics (40):
  • [6] Energy trapping characteristics of bismuth layer structured compound CaBi4Ti4O15
    Kimura, M
    Sawada, T
    Ando, A
    Sakabe, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9B): : 5557 - 5560
  • [7] Preparation and characterization of Zn-modified CaBi4Ti4O15 piezoelectric ceramics with lower sintering temperature
    Xi, Jingwen
    Xing, Jie
    Yuan, Jing
    Nie, Rui
    Chen, Hao
    Zhang, Wen
    Chen, Qiang
    Zhu, Jianguo
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2020, 31 (11) : 8805 - 8814
  • [8] Preparation and characterization of Zn-modified CaBi4Ti4O15 piezoelectric ceramics with lower sintering temperature
    Jingwen Xi
    Jie Xing
    Jing Yuan
    Rui Nie
    Hao Chen
    Wen Zhang
    Qiang Chen
    Jianguo Zhu
    Journal of Materials Science: Materials in Electronics, 2020, 31 : 8805 - 8814
  • [9] Ferroelectric and piezoelectric properties of tungsten doped CaBi4Ti4O15 ceramics
    Jiangtao Zeng
    Ying Wang
    Yongxiang Li
    Qunbao Yang
    Qingrui Yin
    Journal of Electroceramics, 2008, 21 : 305 - 308
  • [10] Ferroelectric and piezoelectric properties of tungsten doped CaBi4Ti4O15 ceramics
    Zeng, Jiangtao
    Wang, Ying
    Li, Yongxiang
    Yang, Qunbao
    Yin, Qingrui
    JOURNAL OF ELECTROCERAMICS, 2008, 21 (1-4) : 305 - 308