Simulation and Analysis of Interface Properties Due to Variation of Gate Oxide Thickness in Au/Al2O3/n-GaSb MOSCAP

被引：2
|
作者：
Ali, Farida A. [1 ]
Mishra, Reeni [1 ]
Kamilla, Sushanta K. [1 ]
Bose, Gouranga [1 ]
机构：
[1] Siksha O Anusandhan Univ, Inst Tech Educ & Res ITER, Bhubaneswar 751030, Odisha, India
来源：
ADVANCED SCIENCE LETTERS | 2014年 / 20卷 / 3-4期
关键词：
High-k; GaSb; MOSCAP; D-it; TCAD;
D O I：
10.1166/asl.2014.5399
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
In this paper interface properties of Au/Al2O3/n-GaSb MOSCAP has been explored for different gate oxide thickness using TCAD tool. The electrical characteristic of Al2O3/n-GaSb MOSCAP was analyzed at 300 K. From the capacitance-voltage (C-V) characteristics of the simulated MOSCAP structure interface state density (D-it) and surface potential at different thickness of Al2O3 (10 nm, 7.5 nm, 5 nm) were calculated. The calculated' Dit was found to be in the order of 10(13) cm(-2) eV(-1) using Terman method and is found to decrease with the increase of Al2O3 thickness. Also the interface trap density was found as a function of surface potential. From the relation it can be predicted that in case of fabricated devices the transition may be more gradual.
引用
收藏
页码：755 / 757
页数：3
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