The Effect of Gate Dielectric Al2O3/ZnO on Interface Quality with N-GaAs

被引：0

作者：

Chen, Liu ^{[1
]}

Zhang, Yu-Ming ^{[1
]}

Lu, Hong-Liang ^{[1
]}

Zhang, Yi-Men ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

来源：

2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) | 2012年

关键词：

GaAs metal-oxide-semiconductor capacitor; ALD; interface trap density;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, The Effect of Gate Dielectric Al2O3/ZnO on Interface Quality with N-GaAs has been investigated. The results measured by X-ray photoelectron spectroscopy show that the presence of ZnO can effectively suppress the formation of oxides at the interface between the GaAs and Al2O3. Using Terman method, the interface trap density has been extracted from C-V curves. It is found that the ZnO layer can effectively improve the interface quality.

引用

页码：517 / 519

页数：3

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