The Effect of Gate Dielectric Al2O3/ZnO on Interface Quality with N-GaAs

被引：0

作者：

Chen, Liu ^{[1
]}

Zhang, Yu-Ming ^{[1
]}

Lu, Hong-Liang ^{[1
]}

Zhang, Yi-Men ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

来源：

2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) | 2012年

关键词：

GaAs metal-oxide-semiconductor capacitor; ALD; interface trap density;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, The Effect of Gate Dielectric Al2O3/ZnO on Interface Quality with N-GaAs has been investigated. The results measured by X-ray photoelectron spectroscopy show that the presence of ZnO can effectively suppress the formation of oxides at the interface between the GaAs and Al2O3. Using Terman method, the interface trap density has been extracted from C-V curves. It is found that the ZnO layer can effectively improve the interface quality.

引用

页码：517 / 519

页数：3

共 50 条

[31] Microwave dielectric properties of ZnO/Al2O3 composite coatings
Zhou, Liang
Luo, Fa
Zhou, Wan-Cheng
Zhu, Dong-Mei
Gongneng Cailiao/Journal of Functional Materials, 2010, 41 (10): : 1800 - 1802
[32] Schottky barrier enhancement using reacted Ni2Al3/Ni/n-GaAs, Ni/Al/Ni/n-GaAs, and NiAl/Al/Ni/n-GaAs contacts
1600, American Inst of Physics, Woodbury, NY, USA (77):
[33] Defects and interfaces in epitaxial ZnO/α-Al2O3 and AlN/ZnO/α-Al2O3 heterostructures
J Appl Phys, 5 (2597):
[34] PHYSICOCHEMICAL CHARACTERIZATION OF ZNO/AL2O3 AND ZNO-MOO3/AL2O3 CATALYSTS
MAEZAWA, A
OKAMOTO, Y
IMANAKA, T
JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I, 1987, 83 : 665 - 674
[35] Defects and interfaces in epitaxial ZnO/α-Al2O3 and AlN/ZnO/α-Al2O3, heterostructures
Narayan, J
Dovidenko, K
Sharma, AK
Oktyabrsky, S
JOURNAL OF APPLIED PHYSICS, 1998, 84 (05) : 2597 - 2601
[36] Surface and catalytic properties of Al2O3, CuO/Al2O3 and ZnO/Al2O3 systems
El-Nabarawy, Th.
Attia, A.A.
Hassan, N.A.
Youssef, A.M.
Adsorption Science and Technology, 1995, 12 (02):
[37] Microstructural characterization at the interface of Al2O3/ZnO/Al2O3 thin films grown by atomic layer deposition
Jang, Yong Woon
Bang, Seokhwan
Jeon, Hyeongtag
Lee, Jeong Yong
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2011, 248 (07): : 1634 - 1638
[38] Dividing effect of a net interface in the Nb/Al2O3 interface
Zhu, DY
Jin, ZH
Wang, YL
RARE METAL MATERIALS AND ENGINEERING, 1999, 28 (01) : 38 - 40
[39] SCHOTTKY-BARRIER ENHANCEMENT USING REACTED NI2AL3NI/N-GAAS, NI/AL/NI/N-GAAS, AND NIAL/AL/NI/N-GAAS CONTACTS
CHEN, CP
CHANG, YA
KUECH, TF
JOURNAL OF APPLIED PHYSICS, 1995, 77 (09) : 4777 - 4782
[40] Dielectric Breakdown of Al2O3/HfO2 Bi-Layer Gate Dielectric
Sahoo, Kartika Chandra
Oates, Anthony S.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2014, 14 (01) : 327 - 332

← 1 2 3 4 5 →