STT-MRAM for embedded memory applications from eNVM to Last Level Cache

被引：0
|
作者：
Wang, Po-Kang [1 ]
机构：
[1] Headway Technol, Milpitas, CA 95035 USA
来源：
2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) | 2018年
关键词：
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
引用
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页数：1
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