Some aspects of sublimation growth of SiC ingots

被引：1
|
作者：
Avramenko, SF [1 ]
Kiselev, VS [1 ]
Valakh, MY [1 ]
Yukhimchuk, VA [1 ]
机构：
[1] Natl Acad Sci Ukraine, Inst Semicond Phys, Special Design & Engn Bur Pilot Prod, UA-03028 Kiev, Ukraine
来源：
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷
关键词：
crystal shape; PVT growth; residual stress;
D O I：
10.4028/www.scientific.net/MSF.353-356.41
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The aim of the present work is to analyze some parameters of SiC crystals: shape, surface morphology acid residual stresses. The shape of the crystals depends on the construction of growth cavity. The change of geometry allowed to grow crystals with convex, concave or flat growth front. it is shown that a flat growth front should be used for excluding radial non-homogenity of doping impurities. The presence of considerable temperature gradients in the bulk crystals during their growing leads to arising mechanical stresses after cooling these crystals. By means of Raman scattering we estimated respective strain values that reach approximately 0.3 Gpa at the centre of the crystal.
引用
收藏
页码：41 / 44
页数：4
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