Some aspects of sublimation growth of SiC ingots

被引：1
|
作者：
Avramenko, SF [1 ]
Kiselev, VS [1 ]
Valakh, MY [1 ]
Yukhimchuk, VA [1 ]
机构：
[1] Natl Acad Sci Ukraine, Inst Semicond Phys, Special Design & Engn Bur Pilot Prod, UA-03028 Kiev, Ukraine
来源：
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷
关键词：
crystal shape; PVT growth; residual stress;
D O I：
10.4028/www.scientific.net/MSF.353-356.41
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The aim of the present work is to analyze some parameters of SiC crystals: shape, surface morphology acid residual stresses. The shape of the crystals depends on the construction of growth cavity. The change of geometry allowed to grow crystals with convex, concave or flat growth front. it is shown that a flat growth front should be used for excluding radial non-homogenity of doping impurities. The presence of considerable temperature gradients in the bulk crystals during their growing leads to arising mechanical stresses after cooling these crystals. By means of Raman scattering we estimated respective strain values that reach approximately 0.3 Gpa at the centre of the crystal.
引用
收藏
页码：41 / 44
页数：4
相关论文
共 50 条
  • [31] Transport phenomena in sublimation growth of SiC bulk crystals
    Segal, AS
    Vorob'ev, AN
    Karpov, SY
    Makarov, YN
    Mokhov, EN
    Ramm, MG
    Ramm, MS
    Roenkov, AD
    Vodakov, YA
    Zhmakin, AI
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 40 - 43
  • [32] A coupled finite element model for the sublimation growth of SiC
    Raback, P
    Nieminen, R
    Yakimova, R
    Tuominen, M
    Janzen, E
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 65 - 68
  • [33] Effect of radiation in solid during SiC sublimation growth
    Nishizawa, Shin-ichi
    Nakashima, Shin-ichi
    Kato, Tomohisa
    SILICON CARBIDE 2006 - MATERIALS, PROCESSING AND DEVICES, 2006, 911 : 29 - +
  • [34] SiC growth in tantalum containers by sublimation sandwich method
    Mokhov, EN
    Ramm, MG
    Roenkov, AD
    Vodakov, YA
    JOURNAL OF CRYSTAL GROWTH, 1997, 181 (03) : 254 - 258
  • [35] Nucleation of AlN on SiC substrates by seeded sublimation growth
    Lu, P.
    Edgar, J. H.
    Lee, R. G.
    Chaudhuri, J.
    JOURNAL OF CRYSTAL GROWTH, 2007, 300 (02) : 336 - 342
  • [36] Sublimation growth of 6H-SiC bulk
    Takanaka, N
    Nishino, S
    Saraie, J
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 49 - 52
  • [37] Heat and mass transport computation at the sublimation growth of SiC
    Böttcher, K
    CRYSTAL RESEARCH AND TECHNOLOGY, 2001, 36 (07) : 719 - 728
  • [38] Uniformization of radial temperature gradient in sublimation growth of SiC
    Tanaka, H
    Nishiguchi, T
    Sasaki, M
    Ohshima, S
    Nishino, S
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 71 - 74
  • [39] Control of SiC growth and graphitization in sublimation sandwich system
    Karpov, SY
    Makarov, YN
    Ramm, MS
    Talalaev, RA
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3): : 340 - 344
  • [40] Coupled finite element model for the sublimation growth of SiC
    Cent for Scientific Computing, Espoo, Finland
    Mater Sci Forum, pt 1 (65-68):
12345