Considerations on the crystal morphology in the sublimation growth of SiC

被引：0
|
作者：
Råback, P
Yakimova, R
Syväjärvi, M
Iakimov, T
Nieminen, R
Janzén, E
机构：
[1] Ctr Sci Comp, FIN-02101 Espoo, Finland
[2] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden
[3] Okmet AB, SE-17824 Ekero, Sweden
[4] Helsinki Univ Technol, Phys Lab, FIN-02015 Helsinki, Finland
来源：
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷
关键词：
crystal growth; instability; mass transport; shape evolution; simulation;
D O I：
10.4028/www.scientific.net/MSF.338-342.95
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper the shape evolution of SiC source and seed is studied with simulations. Some basic geometries and temperature distributions are investigated. Also the condition for stable growth is discussed.
引用
收藏
页码：95 / 98
页数：4
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