Sublimation growth of cubic SiC bulk

被引：0
|
作者：
Yoshikawa, T
Nishino, S
Saraie, J
机构：
来源：
SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Cubic SiC(3C-SiC) single crystals have been grown by the sublimation method on 6H-SiC(0001) substrates which were made by the Acheson method Tile morphology of surface and cross section of the grown layers were characterized and discussed. The observation of the cross section is important to trace the origin of double positioning boundary(DPB). Photoluminescence measurement was used for identification of polytypes.
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页码：57 / 60
页数：4
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