共 50 条
- [31] A strategy for long data retention time of 512Mb DRAM with 0.12μm design rule2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2001, : 27 - 28Uh, HS论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Technol Dev Team, Yongin 449900, Kyunggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Technol Dev Team, Yongin 449900, Kyunggi Do, South KoreaLee, JK论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Technol Dev Team, Yongin 449900, Kyunggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Technol Dev Team, Yongin 449900, Kyunggi Do, South KoreaLee, SH论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Technol Dev Team, Yongin 449900, Kyunggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Technol Dev Team, Yongin 449900, Kyunggi Do, South KoreaAhn, YS论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Technol Dev Team, Yongin 449900, Kyunggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Technol Dev Team, Yongin 449900, Kyunggi Do, South KoreaLee, HO论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Technol Dev Team, Yongin 449900, Kyunggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Technol Dev Team, Yongin 449900, Kyunggi Do, South KoreaHong, SH论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Technol Dev Team, Yongin 449900, Kyunggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Technol Dev Team, Yongin 449900, Kyunggi Do, South KoreaLee, JW论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Technol Dev Team, Yongin 449900, Kyunggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Technol Dev Team, Yongin 449900, Kyunggi Do, South KoreaKoh, GH论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Technol Dev Team, Yongin 449900, Kyunggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Technol Dev Team, Yongin 449900, Kyunggi Do, South KoreaJeong, GT论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Technol Dev Team, Yongin 449900, Kyunggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Technol Dev Team, Yongin 449900, Kyunggi Do, South KoreaChung, TY论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Technol Dev Team, Yongin 449900, Kyunggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Technol Dev Team, Yongin 449900, Kyunggi Do, South KoreaKim, K论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Technol Dev Team, Yongin 449900, Kyunggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Technol Dev Team, Yongin 449900, Kyunggi Do, South Korea
- [32] Reducing Performance Impact of Process Variation For Data Caches2013 8TH INTERNATIONAL CONFERENCE ON ELECTRICAL AND ELECTRONICS ENGINEERING (ELECO), 2013, : 380 - 384Kadayif, Ismail论文数: 0 引用数: 0 h-index: 0机构: Canakkale Onsekiz Mart Univ, Dept Comp Engn, Canakkale, Turkey Canakkale Onsekiz Mart Univ, Dept Comp Engn, Canakkale, TurkeyTuncer, Kadir论文数: 0 引用数: 0 h-index: 0机构: Canakkale Onsekiz Mart Univ, Dept Comp Engn, Canakkale, Turkey Canakkale Onsekiz Mart Univ, Dept Comp Engn, Canakkale, Turkey
- [33] Data retention time and electrical characteristics of cell transistor according to STI materials in 90 nm DRAMJOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 43 (05) : 887 - 891Shin, SH论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South KoreaLee, SH论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South KoreaKim, YS论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South KoreaHeo, JH论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South KoreaBae, DI论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South KoreaHong, SH论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South KoreaPark, SH论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South KoreaLee, JW论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South KoreaLee, JG论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South KoreaOh, JH论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South KoreaKim, MS论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South KoreaCho, CH论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South KoreaChung, TY论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South KoreaKim, K论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South Korea Samsung Elect Co Ltd, Semicond R&D Ctr, Adv Technol Dev & Proc Dev, Yongin 449900, South Korea
- [34] Improvement of performance and data retention characteristics of sub-50nm DRAM by HfSiON Gate dielectric2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2007, : 184 - +Hyun, Sangjin论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South KoreaKim, Hye-Min论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South KoreaLee, Hye-Lan论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South KoreaNam, Kab-Jin论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South KoreaHong, Sug-Hun论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South KoreaKim, Dong-Chan论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South KoreaKim, Jihyun论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South KoreaJang, Soo-Ik论文数: 0 引用数: 0 h-index: 0机构: Adv Proc Integrat Grp, Hwasung Si, Gyeong Gi do, South Korea Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South KoreaJeon, In Sang论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South KoreaKang, Sangbom论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South KoreaChoi, Siyoung论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South KoreaChung, U-In论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South KoreaMoon, Joo-Tae论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South KoreaRyu, Byung-Il论文数: 0 引用数: 0 h-index: 0机构: Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South Korea Samsung Elect Co, Semicond R&D Ctr, Proc Dev Team, San 16, Hwasung City 445701, Gyeonggi Do, South Korea
- [35] An FPGA-Based Test Platform for Analyzing Data Retention Time Distribution of DRAMs2013 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION, AND TEST (VLSI-DAT), 2013,Hou, Chih-Sheng论文数: 0 引用数: 0 h-index: 0机构: Natl Cent Univ, Dept Elect Engn, Jhongli 320, Taiwan Natl Cent Univ, Dept Elect Engn, Jhongli 320, TaiwanLi, Jin-Fu论文数: 0 引用数: 0 h-index: 0机构: Natl Cent Univ, Dept Elect Engn, Jhongli 320, Taiwan Natl Cent Univ, Dept Elect Engn, Jhongli 320, TaiwanLo, Chih-Yen论文数: 0 引用数: 0 h-index: 0机构: Natl Cent Univ, Dept Elect Engn, Jhongli 320, TaiwanKwai, Ding-Ming论文数: 0 引用数: 0 h-index: 0机构: Natl Cent Univ, Dept Elect Engn, Jhongli 320, TaiwanChou, Yung-Fa论文数: 0 引用数: 0 h-index: 0机构: Natl Cent Univ, Dept Elect Engn, Jhongli 320, TaiwanWu, Cheng-Wen论文数: 0 引用数: 0 h-index: 0机构: Natl Cent Univ, Dept Elect Engn, Jhongli 320, Taiwan
- [36] An FPGA-Based Test Platform for Analyzing Data Retention Time Distribution of DRAMs2013 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION, AND TEST (VLSI-DAT), 2013,Hou, Chih-Sheng论文数: 0 引用数: 0 h-index: 0机构: Natl Cent Univ, Dept Elect Engn, Jhongli 320, Taiwan Natl Cent Univ, Dept Elect Engn, Jhongli 320, TaiwanLi, Jin-Fu论文数: 0 引用数: 0 h-index: 0机构: Natl Cent Univ, Dept Elect Engn, Jhongli 320, Taiwan Natl Cent Univ, Dept Elect Engn, Jhongli 320, TaiwanLo, Chih-Yen论文数: 0 引用数: 0 h-index: 0机构: Ind Technol Res Inst, Informat & Commun Res Labs, Hsinchu 310, Taiwan Natl Cent Univ, Dept Elect Engn, Jhongli 320, TaiwanKwai, Ding-Ming论文数: 0 引用数: 0 h-index: 0机构: Ind Technol Res Inst, Informat & Commun Res Labs, Hsinchu 310, Taiwan Natl Cent Univ, Dept Elect Engn, Jhongli 320, TaiwanChou, Yung-Fa论文数: 0 引用数: 0 h-index: 0机构: Ind Technol Res Inst, Informat & Commun Res Labs, Hsinchu 310, Taiwan Natl Cent Univ, Dept Elect Engn, Jhongli 320, TaiwanWu, Cheng-Wen论文数: 0 引用数: 0 h-index: 0机构: Ind Technol Res Inst, Informat & Commun Res Labs, Hsinchu 310, Taiwan Natl Cent Univ, Dept Elect Engn, Jhongli 320, Taiwan
- [37] STI stress-induced degradation of data retention time in DRAM and a new characterizing method for mechanical stress2011 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2011,Jang, Tae-Su论文数: 0 引用数: 0 h-index: 0机构: Hynix Semicond Inc, R&D Div, Ichon Si 467701, Kyoungki Do, South Korea Hynix Semicond Inc, R&D Div, Ichon Si 467701, Kyoungki Do, South KoreaKim, Kyung-do论文数: 0 引用数: 0 h-index: 0机构: Hynix Semicond Inc, R&D Div, Ichon Si 467701, Kyoungki Do, South Korea Hynix Semicond Inc, R&D Div, Ichon Si 467701, Kyoungki Do, South KoreaYoo, Min-Soo论文数: 0 引用数: 0 h-index: 0机构: Hynix Semicond Inc, R&D Div, Ichon Si 467701, Kyoungki Do, South Korea Hynix Semicond Inc, R&D Div, Ichon Si 467701, Kyoungki Do, South KoreaKim, Yong-Taik论文数: 0 引用数: 0 h-index: 0机构: Hynix Semicond Inc, R&D Div, Ichon Si 467701, Kyoungki Do, South Korea Hynix Semicond Inc, R&D Div, Ichon Si 467701, Kyoungki Do, South KoreaCha, Seon-Yong论文数: 0 引用数: 0 h-index: 0机构: Hynix Semicond Inc, R&D Div, Ichon Si 467701, Kyoungki Do, South Korea Hynix Semicond Inc, R&D Div, Ichon Si 467701, Kyoungki Do, South KoreaJeong, Jae-Goan论文数: 0 引用数: 0 h-index: 0机构: Hynix Semicond Inc, R&D Div, Ichon Si 467701, Kyoungki Do, South Korea Hynix Semicond Inc, R&D Div, Ichon Si 467701, Kyoungki Do, South KoreaHong, Sung-Joo论文数: 0 引用数: 0 h-index: 0机构: Hynix Semicond Inc, R&D Div, Ichon Si 467701, Kyoungki Do, South Korea Hynix Semicond Inc, R&D Div, Ichon Si 467701, Kyoungki Do, South Korea
- [38] NOVEL IT-DRAM WITH FIN-GATE AND PILLAR STRUCTURE FOR HOLE STORAGE AND DATA RETENTION TIME IMPROVEMENT2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,Wang, Yu-Chun论文数: 0 引用数: 0 h-index: 0机构: Natl Sun Yat Sen Univ, Dept Elect Engn, 70 Lien Hai Rd, Kaohsiung 80424, Taiwan Natl Sun Yat Sen Univ, Dept Elect Engn, 70 Lien Hai Rd, Kaohsiung 80424, TaiwanLin, Jyi-Tsong论文数: 0 引用数: 0 h-index: 0机构: Natl Sun Yat Sen Univ, Dept Elect Engn, 70 Lien Hai Rd, Kaohsiung 80424, Taiwan Natl Sun Yat Sen Univ, Dept Elect Engn, 70 Lien Hai Rd, Kaohsiung 80424, TaiwanLin, Po-Hsieh论文数: 0 引用数: 0 h-index: 0机构: Natl Sun Yat Sen Univ, Dept Elect Engn, 70 Lien Hai Rd, Kaohsiung 80424, Taiwan Natl Sun Yat Sen Univ, Dept Elect Engn, 70 Lien Hai Rd, Kaohsiung 80424, TaiwanTseng, Shih-Chuan论文数: 0 引用数: 0 h-index: 0机构: Natl Sun Yat Sen Univ, Dept Elect Engn, 70 Lien Hai Rd, Kaohsiung 80424, Taiwan Natl Sun Yat Sen Univ, Dept Elect Engn, 70 Lien Hai Rd, Kaohsiung 80424, TaiwanHsu, Hung-Pei论文数: 0 引用数: 0 h-index: 0机构: Natl Sun Yat Sen Univ, Dept Elect Engn, 70 Lien Hai Rd, Kaohsiung 80424, Taiwan Natl Sun Yat Sen Univ, Dept Elect Engn, 70 Lien Hai Rd, Kaohsiung 80424, TaiwanLu, Dai-Rong论文数: 0 引用数: 0 h-index: 0机构: Natl Sun Yat Sen Univ, Dept Elect Engn, 70 Lien Hai Rd, Kaohsiung 80424, Taiwan Natl Sun Yat Sen Univ, Dept Elect Engn, 70 Lien Hai Rd, Kaohsiung 80424, TaiwanLin, Yong-Huang论文数: 0 引用数: 0 h-index: 0机构: Natl Sun Yat Sen Univ, Dept Elect Engn, 70 Lien Hai Rd, Kaohsiung 80424, Taiwan Natl Sun Yat Sen Univ, Dept Elect Engn, 70 Lien Hai Rd, Kaohsiung 80424, TaiwanSyu, Jyun-Min论文数: 0 引用数: 0 h-index: 0机构: Natl Sun Yat Sen Univ, Dept Elect Engn, 70 Lien Hai Rd, Kaohsiung 80424, Taiwan Natl Sun Yat Sen Univ, Dept Elect Engn, 70 Lien Hai Rd, Kaohsiung 80424, TaiwanHuang, Zih-Hao论文数: 0 引用数: 0 h-index: 0机构: Natl Sun Yat Sen Univ, Dept Elect Engn, 70 Lien Hai Rd, Kaohsiung 80424, Taiwan Natl Sun Yat Sen Univ, Dept Elect Engn, 70 Lien Hai Rd, Kaohsiung 80424, Taiwan
- [39] Novel 1T DRAM Cell for Low-Voltage Operation and Long Data Retention TimeIEICE TRANSACTIONS ON ELECTRONICS, 2011, E94C (01) : 110 - 115Lee, Woojun论文数: 0 引用数: 0 h-index: 0机构: Sogang Univ, Dept Elect Engn, Seoul 121742, South Korea Sogang Univ, Dept Elect Engn, Seoul 121742, South Korea论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:
- [40] A Logic-Based Embedded DRAM with Novel Cell Structure and Dynamically Adaptive Refresh for Long Data Retention, Zero Data Availability Penalty and High Yield2013 5TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW), 2013, : 132 - 134Xue, X. Y.论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, ASIC & Syst State Key Lab, Shanghai 201203, Peoples R China Fudan Univ, ASIC & Syst State Key Lab, Shanghai 201203, Peoples R ChinaMeng, C.论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, ASIC & Syst State Key Lab, Shanghai 201203, Peoples R China Fudan Univ, ASIC & Syst State Key Lab, Shanghai 201203, Peoples R ChinaDong, C. L.论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, ASIC & Syst State Key Lab, Shanghai 201203, Peoples R China Fudan Univ, ASIC & Syst State Key Lab, Shanghai 201203, Peoples R ChinaChen, B.论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, ASIC & Syst State Key Lab, Shanghai 201203, Peoples R China Fudan Univ, ASIC & Syst State Key Lab, Shanghai 201203, Peoples R ChinaLin, Y. Y.论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, ASIC & Syst State Key Lab, Shanghai 201203, Peoples R China Fudan Univ, ASIC & Syst State Key Lab, Shanghai 201203, Peoples R ChinaHuang, R.论文数: 0 引用数: 0 h-index: 0机构: Semiconduct Mfg Int Corp, Technol Res & Dev Ctr, Shanghai, Peoples R China Fudan Univ, ASIC & Syst State Key Lab, Shanghai 201203, Peoples R ChinaZou, Q. T.论文数: 0 引用数: 0 h-index: 0机构: Semiconduct Mfg Int Corp, Technol Res & Dev Ctr, Shanghai, Peoples R China Fudan Univ, ASIC & Syst State Key Lab, Shanghai 201203, Peoples R ChinaWu, J. G.论文数: 0 引用数: 0 h-index: 0机构: Semiconduct Mfg Int Corp, Technol Res & Dev Ctr, Shanghai, Peoples R China Fudan Univ, ASIC & Syst State Key Lab, Shanghai 201203, Peoples R China