Effect of induced gate noise at zero drain bias in field-effect transistors

被引：9

作者：

Jindal, RP ^{[1
]}

机构：

[1] Univ SW Louisiana, Dept Elect & Comp Engn, Lafayette, LA 70504 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 03期

关键词：

D O I：

10.1109/TED.2005.843891

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

According to classical theories, a MOS transistor with zero source-to-drain voltage behaves like a passive resistor exhibiting channel thermal noise and the effect of induced gate noise vanishes. Here, we show that the effect of induced gate noise persists as conductance fluctuations even under these "equilibrium" conditions without disturbing the Nyquist relationship governing the channel thermal noise.

引用

页码：432 / 434

页数：3

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