Effect of induced gate noise at zero drain bias in field-effect transistors

被引:9
|
作者
Jindal, RP [1 ]
机构
[1] Univ SW Louisiana, Dept Elect & Comp Engn, Lafayette, LA 70504 USA
关键词
D O I
10.1109/TED.2005.843891
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
According to classical theories, a MOS transistor with zero source-to-drain voltage behaves like a passive resistor exhibiting channel thermal noise and the effect of induced gate noise vanishes. Here, we show that the effect of induced gate noise persists as conductance fluctuations even under these "equilibrium" conditions without disturbing the Nyquist relationship governing the channel thermal noise.
引用
收藏
页码:432 / 434
页数:3
相关论文
共 50 条
  • [21] EXCESS NOISE IN FIELD-EFFECT TRANSISTORS
    HALLADAY, HE
    BRUNCKE, WC
    PROCEEDINGS OF THE IEEE, 1963, 51 (11) : 1671 - &
  • [22] Computational Study of Gate-Induced Drain Leakage in 2D-Semiconductor Field-Effect Transistors
    Kang, Jiahao
    Cao, Wei
    Pal, Arnab
    Pandey, Sumeet
    Kramer, Steve
    Hill, Richard
    Sandhu, Gurtej
    Banerjee, Kaustav
    2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2017,
  • [23] NEUTRON-INDUCED NOISE IN JUNCTION FIELD-EFFECT TRANSISTORS
    WANG, KK
    VANDERZIEL, A
    CHENETTE, ER
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (08) : 591 - 593
  • [24] MODELING OF SUBMICROMETER GATE FIELD-EFFECT TRANSISTORS
    CARNEZ, B
    CAPPY, A
    CAPPY, A
    SALMER, G
    CONSTANT, E
    ACTA ELECTRONICA, 1980, 23 (02): : 165 - 183
  • [25] CURRENT-VOLTAGE CHARACTERISTIC COLLAPSE IN ALGAN/GAN HETEROSTRUCTURE INSULATED GATE FIELD-EFFECT TRANSISTORS AT HIGH DRAIN BIAS
    KHAN, MA
    SHUR, MS
    CHEN, QC
    KUZNIA, JN
    ELECTRONICS LETTERS, 1994, 30 (25) : 2175 - 2176
  • [26] Gate insulators in organic field-effect transistors
    Veres, J
    Ogier, S
    Lloyd, G
    de Leeuw, D
    CHEMISTRY OF MATERIALS, 2004, 16 (23) : 4543 - 4555
  • [27] NOISE BEHAVIOR OF GAAS FIELD-EFFECT TRANSISTORS WITH SHORT GATE LENGTHS - COMMENT
    SINGH, DN
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (06) : 596 - 597
  • [28] EFFECTS OF ELECTRON-BOMBARDMENT ON NOISE IN JUNCTION GATE FIELD-EFFECT TRANSISTORS
    KRISHNAN, IN
    CHEN, TM
    SOLID-STATE ELECTRONICS, 1973, 16 (11) : 1233 - 1240
  • [29] Physics of high-frequency noise in insulated gate field-effect transistors
    Jindal, R. P.
    2007 INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY, 2007, : 51 - 56