Observation of the light-hole quantum dots in a strained GaAs quantum well

被引：0
|
作者：
Maruyama, W [1 ]
Masumoto, Y [1 ]
Ren, HW [1 ]
机构：
[1] Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 3058571, Japan
来源：
Physics of Semiconductors, Pts A and B | 2005年 / 772卷
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We observed a light-hole-to-electron transition of strain-induced quantum dots (SIQDs) in a strongly strained GaAs quantum well (QW). Circularly-polarized luminescence excitation spectroscopy showed a pronounced counter-circularly polarized component below the heavy-hole exciton transition in the QW. This special feature can be explained by the existence of the light-hole-to-electron transition at this energy level. On the other hand, a very high co-circular polarization (=0.8) was obtained near the lowest transition of SIQD.
引用
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页码：723 / 724
页数：2
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