Strained GaAsP photocathode with GaAs quantum well

被引：0

作者：

Yashin, Y ^{[1
]}

Mamaev, Y ^{[1
]}

Rochansky, A ^{[1
]}

Vinokurov, D ^{[1
]}

机构：

[1] State Polytech Univ, St Petersburg 195251, Russia

来源：

SPIN 2002 | 2003年 / 675卷

关键词：

D O I：

暂无

中图分类号：

O57 [原子核物理学、高能物理学];

学科分类号：

070202 ;

摘要：

By varying of the phosphorous contents "x" and "y" at the GaAs1-xPx/GaAs1-yPy cathodes they can be tuned to the wavelength, corresponding to maximum light power of the certain accelerator laser system. The parameters of strained GaAsP sample have been modified to enhance the quantum yield value at polarization maximum. The modification consisted of the incorporation of heavily doped thin GaAs quantum well layer at the top part of the structure. At the polarization maximum the yield enhancement of up to ten times has been achieved.

引用

页码：1006 / 1010

页数：5

共 50 条

[1] Picosecond electron bunches from GaAs/GaAsP strained superlattice photocathode
Jin, Xiuguang
Matsuba, Shunya
Honda, Yosuke
Miyajima, Tsukasa
Yamamoto, Masahiro
Utiyama, Takashi
Takeda, Yoshikazu
ULTRAMICROSCOPY, 2013, 130 : 44 - 48
[2] Photoreflectance study of GaAs/GaAsP strained-barrier quantum well structures
Yaguchi, Hiroyuki
Zhang, Xiong
Ota, Kazunobu
Nagahara, Masaki
Onabe, Kentaro
Shiraki, Yasuhiro
Ito, Ryoichi
1600, (32):
[3] Tensile-strained barrier GaAsP/GaAs single quantum-well lasers
Agahi, F
Baliga, A
Lau, KM
Anderson, NG
APPLIED PHYSICS LETTERS, 1996, 68 (26) : 3778 - 3780
[4] PHOTOREFLECTANCE STUDY OF GAAS/GAASP STRAINED-BARRIER QUANTUM-WELL STRUCTURES
YAGUCHI, H
ZHANG, X
OTA, K
NAGAHARA, M
ONABE, K
SHIRAKI, Y
ITO, R
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (1B): : 544 - 547
[5] Modulation spectroscopy study of a strained layer GaAs/GaAsP multiple quantum well structure
L. Malikova
Fred H. Pollak
Oleg Gorea
Alexander Korotcov
Journal of Electronic Materials, 2000, 29 : 1346 - 1350
[6] The effect of intermixing on tensile-strained barrier GaAs/GaAsP quantum well structure
Chan, MCY
Li, EH
PHYSICS AND CHEMISTRY OF NANOSTRUCTURED MATERIALS, 2000, : 72 - 75
[7] Modulation spectroscopy study of a strained layer GaAs/GaAsP multiple quantum well structure
Malikova, L
Pollak, FH
Gorea, O
Korotcov, A
JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (11) : 1346 - 1350
[8] The effects of interdiffusion on the polarization insensitivity in a tensile-strained barrier GaAs/GaAsP quantum well
Chan, MCY
Li, EH
PHYSICA E, 2000, 8 (02): : 184 - 188
[9] Optical properties of tensile-strained barrier GaAsP/GaAs intermixed quantum well structure
Sim, SKH
Chan, MCY
Li, EH
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VII, 1999, 3625 : 503 - 514
[10] Fabrication of GaAs/GaAsP superlattice photocathode
Watanabe, O
Nishitani, T
Togawa, K
Takashima, Y
Nakanishi, T
Takeda, Y
Kobayakawa, H
SPIN 2000, 2001, 570 : 1024 - 1026

← 1 2 3 4 5 →