Observation of the light-hole quantum dots in a strained GaAs quantum well

被引：0

作者：

Maruyama, W ^{[1
]}

Masumoto, Y ^{[1
]}

Ren, HW ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 3058571, Japan

来源：

Physics of Semiconductors, Pts A and B | 2005年 / 772卷

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We observed a light-hole-to-electron transition of strain-induced quantum dots (SIQDs) in a strongly strained GaAs quantum well (QW). Circularly-polarized luminescence excitation spectroscopy showed a pronounced counter-circularly polarized component below the heavy-hole exciton transition in the QW. This special feature can be explained by the existence of the light-hole-to-electron transition at this energy level. On the other hand, a very high co-circular polarization (=0.8) was obtained near the lowest transition of SIQD.

引用

页码：723 / 724

页数：2

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