Growth of thick a-plane GaN on r-plane sapphire by direct synthesis method

被引：1

作者：

Nishino, K. ^{[1
]}

Sakamoto, A. ^{[1
]}

Sakai, S. ^{[1
]}

机构：

[1] Univ Tokushima, Inst Technol & Sci, 2-1 Mianmi Jousanjima, Tokushima 7708506, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007 | 2007年 / 4卷 / 07期

关键词：

D O I：

10.1002/pssc.200674785

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Thick film growth of nonpolar a-plane GaN was carried out on r-plane sapphire by direct synthesis method for a substrate of homoepitaxy of a-plane GaN. A 30 mu m thick a-plane GaN film was obtained at growth temperature at 1050 degrees C with a low-temperature buffer layer deposited at 700 degrees C. The surface was smooth but has some pits. Without a buffer layer, 20 mu m thick a-plane GaN with much fewer pits was obtained. The best FWHM of XRD peak in omega-mode obtained was less than 700 arcsec. This film can be used as a substrate for a-plane III-nitrides growth.

引用

页码：2532 / +

页数：2

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