Investigation of the relationship between the total dose effect and thickness of Al2O3 gate dielectric under gamma-ray irradiation

被引：0

作者：

Zhu, Hui-Ping ^{[1
,2
]}

Chen, Xi ^{[1
,2
,4
]}

Zheng, Zhong-Shan ^{[1
,2
]}

Li, Bo ^{[1
,2
]}

Gao, Jian-Tou ^{[1
]}

Li, Duo-Li ^{[1
]}

Luo, Jia-Jun ^{[1
,2
]}

Han, Zheng-Sheng ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

[2] Chinese Acad Sci, Key Lab Silicon Device Technol, Beijing 100029, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[4] North China Univ Technol, Dept Microelect, Beijing 100144, Peoples R China

来源：

2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2018年

关键词：

LAYER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The total dose effect and its dependence on the thickness of Al2O3 gate dielectrics prepared by the atomic layer deposition (ALD) process have been investigated with various gamma-ray irradiation,doses, based on the MOS structure of Al/Al2O3/Si and corresponding high frequency capacitance-voltage (C-V) characterization. The results show that there is a close relationship between the radiation hardness and thickness of the Al2O3 dielectrics, and a thinner Al2O3 dielectric is more sensitive to total dose irradiation than thicker ones.

引用

页码：102 / 104

页数：3

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