Investigation of the relationship between the total dose effect and thickness of Al2O3 gate dielectric under gamma-ray irradiation

被引：0
|
作者：
Zhu, Hui-Ping [1 ,2 ]
Chen, Xi [1 ,2 ,4 ]
Zheng, Zhong-Shan [1 ,2 ]
Li, Bo [1 ,2 ]
Gao, Jian-Tou [1 ]
Li, Duo-Li [1 ]
Luo, Jia-Jun [1 ,2 ]
Han, Zheng-Sheng [1 ,2 ,3 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Chinese Acad Sci, Key Lab Silicon Device Technol, Beijing 100029, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[4] North China Univ Technol, Dept Microelect, Beijing 100144, Peoples R China
来源：
2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2018年
关键词：
LAYER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The total dose effect and its dependence on the thickness of Al2O3 gate dielectrics prepared by the atomic layer deposition (ALD) process have been investigated with various gamma-ray irradiation,doses, based on the MOS structure of Al/Al2O3/Si and corresponding high frequency capacitance-voltage (C-V) characterization. The results show that there is a close relationship between the radiation hardness and thickness of the Al2O3 dielectrics, and a thinner Al2O3 dielectric is more sensitive to total dose irradiation than thicker ones.
引用
收藏
页码：102 / 104
页数：3
相关论文
共 50 条
  • [41] Dielectric Breakdown of Al2O3/HfO2 Bi-Layer Gate Dielectric
    Sahoo, Kartika Chandra
    Oates, Anthony S.
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2014, 14 (01) : 327 - 332
  • [42] Characterization of Al2O3 Gate Dielectric for Graphene Electronics on Flexible Substrates
    Yang, Xinxin
    Bonmann, Marlene
    Vorobiev, Andrei
    Stake, Jan
    2016 GLOBAL SYMPOSIUM ON MILLIMETER WAVES (GSMM) & ESA WORKSHOP ON MILLIMETRE-WAVE TECHNOLOGY AND APPLICATIONS, 2016, : 153 - 156
  • [43] Positive Bias Instability in ZnO TFTs with Al2O3 Gate Dielectric
    Bolshakov, Pavel
    Rodriguez-Davila, Rodolfo A.
    Quevedo-Lopez, Manuel
    Young, Chadwin D.
    2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2019,
  • [44] Fundamental Characteristics of SiC MIS Structure with Al2O3 as Gate Dielectric
    Liu Li
    Ma Xiao Hua
    Yang Yin Tang
    ADVANCED MATERIALS AND STRUCTURES, PTS 1 AND 2, 2011, 335-336 : 1079 - 1085
  • [45] Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation
    Chen, Rui
    Liang, Yanan
    Han, Jianwei
    Lu, Qihong
    Chen, Qian
    Wang, Ziyu
    Wang, Hao
    Wang, Xuan
    Yuan, Runjie
    NANOMATERIALS, 2022, 12 (13)
  • [46] Study on the dielectric properties of Al2O3/TiO2 sub-nanometric laminates: effect of the bottom electrode and the total thickness
    Ben Elbahri, M.
    Kahouli, A.
    Mercey, B.
    Lebedev, O.
    Donner, W.
    Luders, U.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (06)
  • [47] Effect of Al2O3 Content on Dielectric Properties of Al2O3/LiTaO3 Composite Ceramics
    Zhang You-Feng
    Zhou Yu
    Jia De-Chang
    Meng Qing-Chang
    JOURNAL OF INORGANIC MATERIALS, 2009, 24 (06) : 1189 - 1192
  • [48] Effect of high-dose irradiation on the optically stimulated luminescence of Al2O3:C
    Yukihara, EG
    Whitley, VH
    McKeever, SWS
    Akselrod, AE
    Akselrod, MS
    RADIATION MEASUREMENTS, 2004, 38 (03) : 317 - 330
  • [49] Hot Carrier Stress Investigation of Zinc Oxide Thin Film Transistors with an Al2O3 Gate Dielectric
    Rodriguez-Davila, Rodolfo A.
    Mejia, Israel
    Quevedo-Lopez, Manuel
    Young, Chadwin D.
    2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2018,
  • [50] Thermoluminescence spectra of gamma-ray-irradiated Al2O3
    Choe, HS
    Chung, KS
    Kim, HS
    Kim, TK
    Whang, CN
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1997, 30 (02) : 275 - 279
12345