High Robustness S-Band GaN Based LNA

被引：7

作者：

Provost, Zineb Ouarch ^{[1
]}

Caille, Laurent ^{[1
]}

Camiade, Marc ^{[1
]}

Olivier, Maxime ^{[2
]}

Leclerc, David ^{[2
]}

Tolant, Clement ^{[2
]}

Stanislawiak, Michel ^{[2
]}

机构：

[1] UMS, Villebon Sur Yvette, France

[2] Thales LAS, Elancourt, France

来源：

2019 14TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2019) | 2019年

关键词：

GaN LNA; full-MMIC; detector; limiter; cold FET; robustness; recovery time; S-band;

D O I：

10.23919/EuMIC.2019.8909569

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A robust full-MMIC S-band Low Noise Amplifier including power limiter based on envelope detector and Cold FET power reflector is presented. The robust LNA is based on 0.25 mu m UMS GaN technology and exhibits high Input Power-handling up to 40W over 2-4GHz bandwidth associated to measured Recovery Time lower than 0.5 mu s. Furthermore, the LNA noise figure performance is lower than 2dB with more than 22dB of small signal gain. These results are promising for the next frontend radar architectures.

引用

页码：243 / 246

页数：4

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