S-band Discrete and MMIC GaN Power Amplifiers

被引：0

作者：

Nilsson, Joakim ^{[1
]}

Billstrom, Niklas ^{[1
]}

Rorsman, Niklas ^{[2
]}

Romanini, Paolo ^{[3
]}

机构：

[1] Saab AB, Microwave & Antennas, Saab Microwave Syst, SE-41289 Gothenburg, Sweden

[2] Chalmers, Gothenburg, Sweden

[3] SELEX Sistemi Integrati, Rome, Italy

来源：

2009 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3 | 2009年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of GaN devices for microwave power amplifiers begins to be a reality in Europe. This paper describes two S-band (2.7-3.3 GHz) high power amplifier (HPA) designs; one discrete 100 W output stage and one 10 W MMIC power amplifier. The discrete power amplifier is designed using two GaN power bars with a total gate width of 19.2 mm. The GaN power bars have been developed by Selex-SI, within the european co-project Korrigan. The MMIC power amplifier was designed using a 0.25 mu m GaN HEMT process supplied and processed by Chalmers.

引用

页码：1848 / +

页数：2

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