Hybrid and Monolithic GaN Power Transistors for High Power S-Band Radar Applications

被引：0
|
作者：
Wood, Simon M. [1 ]
Andre, Ulf [1 ]
Millon, Bradley J. [1 ]
Milligan, Jim [1 ]
机构：
[1] Cree Inc, RF & Power Devices, Res Triangle Pk, NC USA
来源：
2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2012年
关键词：
GaN; HEMT; Power Amplifier; Radar; MMIC;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
this paper presents the design, development and characterization of three products for S-Band Radar applications. These products include two 240 Watt hybrid power transistors and a fully integrated 75 Watt packaged MMIC.
引用
收藏
页码：421 / 424
页数：4
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