High Power S-band GaN-based Power Amplifier for Radar Systems

被引：0

作者：

Yang, Yuting ^{[1
]}

Zhang, Mi ^{[1
]}

Che, Wenquan ^{[1
]}

Chen, Haidong ^{[1
]}

Cai, Qi ^{[1
]}

机构：

[1] Nanjing Univ Sci & Technol, Dept Commun Engn, Nanjing 210094, Jiangsu, Peoples R China

来源：

2015 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP) | 2015年

关键词：

gallium nitride (GaN) high electron mobility transistor (HEMT); high power amplifier (HPA); timing control; bias circuit;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

One S-band high-power GaN-based power amplifier (PA) is investigated. The design of the multi-stage PA and the biasing circuit are investigated seperately, including the two stages of power amplifiers which delivers about 50dBm of saturated output power in class AB from 2.7 to 2.9 GHz and the bias control channel which provides special bias and power sequencing for GaN HEMTs. Overall circuits operating at S band are designed, fabricated and measured.

引用

页码：77 / 79

页数：3

共 50 条

[1] An Adaptable GaN Power Amplifier for S-Band Radar
Smith, Robert
Devlin, Liam
Tran, Kim
Martin, Richard
[J]. MICROWAVE JOURNAL, 2019, : 6 - 16
[2] GaN HEMT Based S-Band Power Amplifier
Ahirwar, Archana
Singh, Poonam
Tomar, S. K.
Mishra, Meena
Kumar, Ashok
Sehgal, B. K.
[J]. PHYSICS OF SEMICONDUCTOR DEVICES, 2014, : 75 - 76
[3] S-band GaN PolHEMT Power Amplifier
Goralczyk, Marcin
Gryglewski, Daniel
[J]. 2016 21ST INTERNATIONAL CONFERENCE ON MICROWAVE, RADAR AND WIRELESS COMMUNICATIONS (MIKON), 2016,
[4] Hybrid and Monolithic GaN Power Transistors for High Power S-Band Radar Applications
Wood, Simon M.
Andre, Ulf
Millon, Bradley J.
Milligan, Jim
[J]. 2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2012, : 421 - 424
[5] S-band High-efficiency Miniaturized Wideband GaN Power Amplifier
Li, Fei
Zhong, Shi-Chang
[J]. CONFERENCE PROCEEDINGS OF 2019 IEEE INTERNATIONAL CONFERENCE ON SIGNAL PROCESSING, COMMUNICATIONS AND COMPUTING (IEEE ICSPCC 2019), 2019,
[6] Design and Implementation of Class-F GaN HEMT Power Amplifier for S-Band Radar
Pradeep, K. S.
Chowdhary, Chetan C.
Poornima, P.
Ramya, K.
[J]. 2017 INTERNATIONAL CONFERENCE ON ELECTRICAL, ELECTRONICS, COMMUNICATION, COMPUTER, AND OPTIMIZATION TECHNIQUES (ICEECCOT), 2017, : 103 - 109
[7] Design and Development of GaN-Based Power Amplifier for Radar Applications
Shukla, Ambudhi
Ray, K. P.
[J]. IETE TECHNICAL REVIEW, 2024, 41 (05) : 557 - 577
[8] GaN-based E-band Power Amplifier Modules
Schwantuschke, D.
Henneberger, R.
Wagner, S.
Tessmanni, A.
Kallfass, I.
Brueckner, P.
Quay, R.
Ambacher, O.
[J]. 2016 46TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2016, : 564 - 567
[9] An S-Band GaN MMIC High Power Amplifier With 50 W Output Power and 55% Power Added Efficiency
Giofre, Rocco
Costanzo, Ferdinando
Colangeli, Sergio
Ciccognani, Walter
Sotgia, Manuela
Cirillo, Maurizio
Limiti, Ernesto
[J]. 2018 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC), 2018, : 554 - 556
[10] A HIGH-POWER S-BAND BIPOLAR AMPLIFIER
FATHY, A
KALOKITIS, D
[J]. MICROWAVE JOURNAL, 1989, 32 (06) : 137 - &

← 1 2 3 4 5 →